Graphene/Ferroelectric (Ge-Doped HfO 2 ) Adaptable Transistors Acting as Reconfigurable Logic Gates.

We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO 2 /5 nm Ge-HfO 2 intermediate layer/8 nm tunnel HfO 2 / p -Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the p -Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current.