InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering.

Micro or submicron scale light-emitting diodes (µLEDs) have been extensively studied recently as the next-generation display technology. It is desired that µLEDs exhibit high stability and efficiency, submicron pixel size, and potential monolithic integration with Si-based complementary metal-oxide-semiconductor (CMOS) electronics. Achieving such µLEDs, however, has remained a daunting challenge. The polar nature of III-nitrides causes severe wavelength/color instability with varying carrier concentrations in the active region. The etching-induced surface damages and poor material quality of high indium composition InGaN quantum wells (QWs) severely deteriorate the performance of µLEDs, particularly those emitting in the green/red wavelength. Here we report, for the first time, µLEDs grown directly on Si with submicron lateral dimensions. The µLEDs feature ultra-stable, bright green emission with negligible quantum-confined Stark effect (QCSE). Detailed elemental mapping and numerical calculations show that the QCSE is screened by introducing polarization doping in the active region, which consists of InGaN/AlGaN QWs surrounded by an AlGaN/GaN shell with a negative Al composition gradient along the c-axis. In comparison with conventional GaN barriers, AlGaN barriers are shown to effectively compensate for the tensile strain within the active region, which significantly reduces the strain distribution and results in enhanced indium incorporation without compromising the material quality. This study provides new insights and a viable path for the design, fabrication, and integration of high-performance µLEDs on Si for a broad range of applications in on-chip optical communication and emerging augmented reality/mixed reality devices, and so on.