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Thermally Reentrant Crystalline Phase Change in Perovskite-Derivative Nickelate Enabling Reversible Switching of Room-Temperature Electrical Resistivity.

Kota MatsumotoHideyuki KawasokoEiji NishiboriTomoteru Fukumura
Published in: Advanced science (Weinheim, Baden-Wurttemberg, Germany) (2023)
Reversible switching of room-temperature electrical resistivity due to crystal-amorphous transition is demonstrated in various chalcogenides for development of non-volatile phase change memory. However, such reversible thermal switching of room-temperature electrical resistivity has not reported in transition metal oxides so far, despite their enormous studies on the electrical conduction like metal-insulator transition and colossal magnetoresistance effect. In this study, a thermally reversible switching of room-temperature electrical resistivity is reported with gigantic variation in a layered nickelate Sr 2.5 Bi 0.5 NiO 5 (1201-SBNO) composed of (Sr 1.5 Bi 0.5 )O 2 rock-salt and SrNiO 3 perovskite layers via unique crystalline phase changes between the conducting 1201-SBNO with ordered (O-1201), disordered Sr/Bi arrangements in the (Sr 1.5 Bi 0.5 )O 2 layer (D-1201), and insulating oxygen-deficient double perovskite Sr 2 BiNiO 4.5 (d-perovskite). The O-1201 is reentrant by high-temperature annealing of ≈1000 °C through crystalline phase change into the D-1201 and d-perovskite, resulting in the thermally reversible switching of room-temperature electrical resistivity with 10 2 - and 10 9 -fold variation, respectively. The 1201-SBNO is the first oxide to show the thermally reversible switching of room-temperature electrical resistivity via the crystalline phase changes, providing a new perspective on the electrical conduction for transition metal oxides.
Keyphrases
  • room temperature
  • transition metal
  • ionic liquid
  • high temperature
  • mass spectrometry
  • light emitting
  • gas chromatography