Transition from Schottky to ohmic contacts in the C 31 and MoS 2 van der Waals heterostructure.

The utilization of conventional metal contacts has restricted the industrial implementation of two-dimensional channel materials. To address this issue, we conducted first-principles calculations to investigate the interface properties of C 31 and MoS 2 contacts. An ohmic contact and a low van der Waals barrier were found in the C 31 /MoS 2 heterostructure. Our findings provide a promising new contact metal material for two-dimensional nanodevices based on MoS 2 .