Anomalous Hall effect in Nd-doped Bi 1.1 Sb 0.9 STe 2 topological insulator single crystals.
Lei ChenWeiyao ZhaoKaijian XingMengyun YouXiaolin WangRen-Kui ZhengPublished in: Physical chemistry chemical physics : PCCP (2024)
Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantum anomalous Hall effect, which has been observed in magnetic-topological-insulator-based devices. In this work, we report successful doping of rare-earth element Nd into Bi 1.1 Sb 0.9 STe 2 bulk-insulating topological insulator single crystals, in which the Nd moments are ferromagnetically ordered at ∼100 K. Benefiting from the in-bulk-gap Fermi level, electronic transport behaviors dominated by the topological surface states are observed in the ferromagnetic region. At low temperatures, strong Shubnikov-de Haas oscillations with a nontrivial Berry phase are observed. The topological insulator with long range magnetic ordering in Nd-doped Bi 1.1 Sb 0.9 STe 2 single crystals provides a good platform for quantum transport studies and spintronic applications.