Realization of low potential barrier in MoS2/rGO heterojunction with enhanced electrical conductivity for thin film thermoelectric applications.

Two-dimensional (2D) van der Waals (vdWs) materials in-plane anisotropy, caused by a low-symmetric lattice structure, has considerably increased their applications, particularly in thermoelectric. MoS2 and MoS2/reduced graphene oxide (rGO)/MoS2 thin films were grown on SiO2/Si substrate by atmospheric chemical vapor deposition technique to study the thermoelectric performance. Few layered MoS2 was confirmed by the vibrational analysis and the composition elements are confirmed by the XPS technique. The continuous grains lead to reduced phonon life time in A1g and low activation energy assists to enhance the electrical property. MoS2/rGO achieved the highest σ of 22622 S/m at 315 K due to an electron-rich cloud around the electrons in S atoms near the adjacent layer of rGO.&#xD.