Tuning the Two-Dimensional Electron Gas at Oxide Interfaces with Ti-O Configurations: Evidence from X-ray Photoelectron Spectroscopy.
Yu ZhangYulin GanWei NiuKion NorrmanXi YanDennis Valbjørn ChristensenMerlin von SoostenHongrui ZhangBaogen ShenNini PrydsJirong SunYun-Zhong ChenPublished in: ACS applied materials & interfaces (2017)
A chemical redox reaction can lead to a two-dimensional electron gas at the interface between a TiO2-terminated SrTiO3 (STO) substrate and an amorphous LaAlO3 capping layer. When replacing the STO substrate with rutile and anatase TiO2 substrates, considerable differences in the interfacial conduction are observed. On the basis of X-ray photoelectron spectroscopy (XPS) and transport measurements, we conclude that the interfacial conduction comes from redox reactions, and that the differences among the materials systems result mainly from variations in the activation energies for the diffusion of oxygen vacancies at substrate surfaces.
Keyphrases
- electron transfer
- high resolution
- room temperature
- electron microscopy
- single molecule
- solid state
- ionic liquid
- dual energy
- quantum dots
- structural basis
- molecular dynamics simulations
- amino acid
- mass spectrometry
- pseudomonas aeruginosa
- magnetic resonance
- biofilm formation
- staphylococcus aureus
- escherichia coli
- solar cells
- candida albicans