Machine learning-based exploration of molecular design descriptors for area-selective atomic layer deposition (AS-ALD) precursors.
Tran Thi Ngoc VanChangsu KimHojae LeeJiyong KimBonggeun ShongPublished in: Journal of molecular modeling (2023)
We employ density functional theory (DFT) calculations and machine learning (ML) techniques to analyze the relationship between the structure and the surface reactivity of the precursor. Considering DFT calculation data (M06L/def2-tzvp, Gaussian 09 and Orca 4.0) and information on precursor structures, artificial neural networks (ANN, neuralnet, R) are applied to identify critical descriptors of the AS-ALD process. Furthermore, we utilize this ANN model to predict precursor reactivity according to surface terminations.