Fully solution-induced high performance indium oxide thin film transistors with ZrO x high-k gate dielectrics.

Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In 2 O 3 thin films and ZrO x gate dielectrics, as well as the fabrication of In 2 O 3 -based TFTs. To verify the possible applications of ZrO x thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In 2 O 3 TFTs based on ZrO 2 dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 °C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high μ sat of 4.42 cm 2 V -1 s -1 , low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large I on / I off of 7.5 × 10 7 , respectively. The as-fabricated In 2 O 3 /ZrO x TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.