Narrowband ultraviolet-B persistent luminescence from (Y,Gd)3Ga5O12:Bi3+ phosphors for optical tagging application.

Luminescent materials that emit in the narrowband ultraviolet-B (NB-UVB; 310-313 nm) spectral region have attracted considerable attention due to their unique spectral features, which endow them with great potential applications in the fields of photochemistry and photomedicine. However, NB-UVB persistent luminescent materials are relatively lacking, especially materials that are excitable by natural sunlight. Here we report the NB-UVB persistent luminescence of Gd3+ in (Y,Gd)3Ga5O12:Bi3+ garnets by making use of the persistent energy transfer from Bi3+ to Gd3+. The optimal Bi3+ and Gd3+ concentrations for the maximum energy transfer efficiency are determined and persistent NB-UVB light emission with a peak wavelength at 313 nm and an afterglow time of more than 24 h is successfully achieved in the (Y,Gd)3Ga5O12:Bi3+ phosphor. More importantly, the as-synthesized NB-UVB persistent phosphors are also excitable by the widely available natural sunlight and exhibit exceptional NB-UVB persistent luminescence performance. Benefitting from the visible-blind emission feature, interference-free capability from indoor ambient light and self-sustained optical characteristic, the developed sunlight-excitable NB-UVB persistent phosphors here not only hold great promise for covert optical tagging applications, but also open new opportunities for optical data storage in a bright indoor environment.