Revealing the relationship between photoelectrochemical performance and interface hole trapping in CuBi2O4 heterojunction photoelectrodes.

p-Type CuBi2O4 is considered a promising metal oxide semiconductor for large-scale, economic solar water splitting due to the optimal band structure and low-cost fabrication. The main challenge in utilizing CuBi2O4 as a photoelectrode for water splitting, is that it must be protected from photo-corrosion in aqueous solutions, an inherent problem for Cu-based metal oxide photoelectrodes. In this work, several buffer layers (CdS, BiVO4, and Ga2O3) were tested between CuBi2O4 and conformal TiO2 as the protection layer. RuO x was used as the co-catalyst for hydrogen evolution. Factors that limit the photoelectrochemical performance of the CuBi2O4/TiO2/RuO x , CuBi2O4/CdS/TiO2/RuO x , CuBi2O4/BiVO4/TiO2/RuO x and CuBi2O4/Ga2O3/TiO2/RuO x heterojunction photoelectrodes were revealed by comparing photocurrents, band offsets, and directed charge transfer measured by modulated surface photovoltage spectroscopy. For CuBi2O4/Ga2O3/TiO2/RuO x photoelectrodes, barriers for charge transfer strongly limited the performance. In CuBi2O4/CdS/TiO2/RuO x , the absence of hole traps resulted in a relatively high photocurrent density and faradaic efficiency for hydrogen evolution despite the presence of pronounced deep defect states at the CuBi2O4/CdS interface. Hole trapping limited the performance moderately in CuBi2O4/BiVO4/TiO2/RuO x and strongly in CuBi2O4/TiO2/RuO x photoelectrodes. For the first time, our results show that hole trapping is a key factor that must be addressed to optimize the performance of CuBi2O4-based heterojunction photoelectrodes.