Login / Signup

Ion migration in p-type perovskite MAPbI 3 films under an electric field and thin-film transistor device failure.

Jiale SuZhenxin YangXuanhe LiFushun LiJuntao HuNan ChenTao ZhangDengke WangZheng-Hong LuQiang Zhu
Published in: Chemical communications (Cambridge, England) (2024)
This study demonstrated a dynamic analysis to investigate the ion migration in p-type perovskite MAPbI 3 films under an electric field, revealing its detrimental effects on the electrical performance of MAPbI 3 -based devices. An additive strategy was proposed to suppress ion migration, thereby facilitating the fabrication of high-performance MAPbI 3 -based devices.
Keyphrases
  • room temperature
  • high efficiency