Excitation Energy Dependence of Photoluminescence Quantum Yields in Semiconductor Nanomaterials with Varying Dimensionalities.

The excitation energy dependence (EED) of the photoluminescence quantum yield (ΦPL) of semiconductor nanoparticles with varying dimensionalities is reported. Specifically, the EEDs of CdSe quantum dots, CdSe quantum platelets, CdSe quantum belts, and CdTe quantum wires were determined via measurements of individual ΦPL values and photoluminescence efficiency (PLEff(E)) spectra. There is a general trend of overall decreasing efficiency for radiative recombination with increasing excitation energy. In addition, there are often local minima in the PLEff(E) spectra that are most often at energies between quantum-confinement transitions. The average PL lifetimes of the samples do not depend on the excitation energy, suggesting that the EED of ΦPL arises from charge carrier trapping that competes efficiently with intraband carrier relaxation to the band edge. The local minima in the PLEff(E) spectra are attributed to excitation into optically coupled states that results in the loss of carriers in the semiconductor. The EED data suggest that the PLEff(E) spectra depend on the sample synthesis, preparation, surface passivation, and environment.