Ultralow-dielectric-constant Atomic Layers of Amorphous Carbon Nitride Topologically Derived from MXene.

Low-dielectric constant materials such as silicon dioxide serving as interconnect insulators in current integrated circuit face a great challenge due to their relatively high dielectric constant of ∼ 4, twice that of the recommended value by the International Roadmap for Devices and Systems, causing severe parasitic capacitance and associated response delay. Here, novel atomic layers of amorphous carbon nitride (a-CN) were prepared via a topological conversion of MXene-Ti 3 CNT x under bromine vapor. Remarkably, the assembled a-CN film exhibits an ultralow dielectric constant of 1.69 at 100 kilohertz, much lower than the previously reported dielectric materials such as amorphous carbon (2.2) and fluorinated-doped SiO 2 (3.6), ascribed to the low density of 0.55 g cm -3 and high sp 3 C level of 35.7%. Moreover, the a-CN film has a breakdown strength of 5.6 megavolts per centimeter, showing great potential in integrated circuit application. This article is protected by copyright. All rights reserved.