Optimum Design Configuration of Thin-Film Transistors And Quantum-Dot Light-Emitting Diodes for Active-Matrix Displays.

Active matrix (AM) quantum-dot light-emitting diodes (QLEDs) driven by thin-film transistors (TFTs) have attracted significant attention for use in next-generation displays. Several challenges remain for the realisation of AM-QLEDs, such as device design, fabrication process, and integration between QLEDs and TFTs, depending on their device structures and configurations. Herein, we demonstrate efficient and stable AM-QLEDs using conventional and inverted structured QLEDs (C- and I-QLEDs, respectively) combined with facile type-convertible (p- and n-type) single-walled carbon nanotube (SWNT)-based TFTs. Based on the four possible configurations of the QLED-TFT subpixel, we compare the performance of the SWNT TFT-driven QLEDs and the fabrication process to determine the ideal configuration, taking advantage of each structure for AM-QLEDs. We also optimise the QLEDs and TFTs to maximise the performance of the AM-QLEDs-the inner shell composition of quantum dots and carrier type of TFTs-resulting in a maximum external quantum efficiency and operational lifetime (at an initial luminance of 100 cd/m 2 ) of 21.2% and 38,100,000 h for the C-QLED, and 19.1% and 133,100,000 h for the I-QLED, respectively. Finally, we successfully demonstrate a 5×5 AM-QLED display array controlled using SWNT TFTs. This study is expected to contribute to the development of advanced AM-QLED displays. This article is protected by copyright. All rights reserved.