Highly stable two-dimensional Ruddlesden-Popper perovskite-based resistive switching memory devices.

Resistive switching random-access memory (ReRAM) devices based on organic-inorganic halide perovskites (OIHPs) have emerged as a new class of data storage devices. Recently, two-dimensional (2D) OIHPs have attracted much attention for ReRAM applications because of their structural diversity and superior stability. Here, the RS characteristics of ReRAM devices fabricated utilizing pure 2D Ruddlesden-Popper (RP) perovskite crystals, namely (TEA) 2 PbBr 4 and (TEA) 2 PbI 4 , are reported. The RS memory devices exhibit reliable and reproducible bipolar switching properties with high ON/OFF ratio (∼10 4 ), excellent data retention of over 10 4 s, and good endurance characteristics of 200 cycles. This study investigates temperature-dependent RS behaviors, elucidating the creation and annihilation of a conducting pathway in the presence of an external electric field. Additionally, the RS property of 2D RP perovskite-based memory devices is found to be retained over 45 days at ambient conditions under a relative humidity of 47% ± 4%. Our findings may accelerate the technological deployment of stable 2D perovskite-based RS memory devices for successful logic application.