Multi-pixels gallium oxide UV detector array and optoelectronic applications.

With the continuous progress of deep ultraviolet (DUV) communication and photodetection, the research on UV imaging has become an important focusing point in research lab and industrial field. For more accurate information collection and transport, the photodetector array of many pixels is the key of the UV imaging and commnication systems, and its photoelectric performance seriously depends on semiconductor material and array layout. Gallium oxide (Ga2O3) is an emerging wide bandgap semicondutor material which has been widely used in DUV dectection. Therefore, this paper mainly focuses on Ga2O3 semiconductor detector array which has gained widespread attention in the field of DUV technique, from the perspective of individual device to array and its optoelectonic integration; for reviewing and discussing the research progress in design, fabrication, and application of Ga2O3 arrays in recent years. It includes the structure design and material selection of array units, units growth and array layout, response to solar blind DUV light, the method of imaging and image recognition. Morever, we have analyzed and reflected on the future development trend of photodetector array, aiming to provide some useful suggestions for the optimizing array structure, improving patterned growth technology, improving material growth quality. As well as that Ga2O3 optoelectronic devices and their applications are discussed in view of device physics and photophysics in detector.