Asymmetric contact-induced selective doping of CVD-grown bilayer WS 2 and its application in high-performance photodetection with an ultralow dark current.

Two-dimensional (2D) transition metal dichalcogenides (TMDs) are excellent candidates for high-performance optoelectronics due to their high carrier mobility, air stability and strong optical absorption. However, photodetectors made with monolayer TMDs often exhibit a high dark current, and thus, there is a scope for further improvement. Herein, we developed a 2D bilayer tungsten disulfide (WS 2 ) based photodetector (PD) with asymmetric contacts that exhibits an exceptionally low dark current and high specific detectivity. High-quality and large-area monolayer and bilayer WS 2 flakes were synthesized using a thermal chemical vapor deposition system. Compared to conventional symmetric contact electrodes, utilizing metal electrodes with higher and lower work functions relative to bilayer WS 2 aids in achieving asymmetric lateral doping in the WS 2 flakes. This doping asymmetry was confirmed through the photoluminescence spectral profile and Raman mapping analysis. With the asymmetric contacts on bilayer WS 2 , we find evidence of selective doping of electrons and holes near the Ti and Au contacts, respectively, while the WS 2 region away from the contacts remains intrinsic. When compared with the symmetric contact case, the dark current in the WS 2 PD with asymmetric (Au, Ti) contact decreases by an order of magnitude under reverse bias with a concomitant increase in the photocurrent, resulting in an improved on/off ratio of ∼10 5 and overall improved device performance under identical illumination conditions. We explained this improved performance based on the energy band alignment showing a unidirectional charge flow under light illumination. Our results indicate that the planar device structure and compatibility with current nanofabrication technologies can facilitate its integration into advanced chips for futuristic low-power optoelectronic and nanophotonic applications.