Conflux of spin Nernst and spin Hall effect in ZnCu2SnSe4 Topological Insulator.

A comprehensive exploration of the intriguing phenomena known as the spin Nernst effect (SNE) and the spin Hall effect (SHE) within the context of nonmagnetic strong topological insulator ZnCu2SnSe4, has been
carried out employing first-principles calculations. Our theoretical calculations unveil significantly large intrinsic spin Nernst conductivity (SNC) and spin Hall conductivity (SHC) in the bulk topological insulator ZnCu2SnSe4. Delving deeper into the intricacies of our findings, we elucidate how the inverted band
order in the topological material drastically influences the spin Berry curvature, consequently exerting a profound impact on SHC and SNC. Detailed analyses reveal that the contribution from the bulk to the generation of pure spin current in a topological insulator is comparable to that of a surface. This underscores
the potential role of topological insulators in the development of spin-switching devices. We present compelling evidence that ZnCu2SnSe4 holds immense promise as an optimal candidate for the generation of pure spin currents, achieved through the application of both thermal gradients and electric fields. This, in turn, opens up exciting avenues for its utilization in the realms of Spin-Caloritronics, Spin-Orbitronics, and Spintronics.