Impact of 1,8-Diiodooctane (DIO) Additive on the Active Layer Properties of Cu 2 ZnSnS 4 Kesterite Thin Films Prepared by Electrochemical Deposition for Photovoltaic Applications.

Kesterite Cu 2 ZnSnS 4 (CZTS) thin films using various 1,8-diiodooctane (DIO) polymer additive concentrations were fabricated by the electrochemical deposition method. The optical, electrical, morphological, and structural properties of the CZTS thin films synthesized using different concentrations of 5 mg/mL, 10 mg/mL, 15 mg/mL, and 20 mg/mL were investigated using different techniques. Cyclic voltammetry exhibited three cathodic peaks at -0.15 V, -0.54 V, and -0.73 V, corresponding to the reduction of Cu 2+ , Sn 2+ , Sn 2+ , and Zn 2+ metal ions, respectively. The analysis of the X-ray diffraction (XRD) pattern indicated the formation of the pure kesterite crystal structure, and the Raman spectra showed pure CZTS with the A1 mode of vibration. Field emission scanning electron microscopy (FE-SEM) indicated that the films are well grown, with compact, crack-free, and uniform deposition and a grain size of approximately 4 µm. For sample DIO-20 mg/mL, the elemental composition of the CZTS thin film was modified to Cu:Zn:Sn: and S = 24.2:13.3:12.3:50.2, which indicates a zinc-rich and copper-poor composition. The X-ray photoelectron spectroscopy (XPS) results confirmed the existence of Cu, Sn, Zn, and S elements and revealed the element oxidation states. The electrochemical deposition synthesis increased the absorption of the CZTS film to more than 10 4 cm -1 with a band gap between 1.62 eV and 1.51 eV. Finally, the photovoltaic properties of glass/CZTS/CdS/n-ZnO/aluminum-doped zinc oxide (AZO)/Ag solar cells were investigated. The best-performing photovoltaic device, with a DIO concentration of 20 mg/mL, had a short-circuit current density of 16.44 mA/cm 2 , an open-circuit voltage of 0.465 V, and a fill factor of 64.3%, providing a conversion efficiency of 4.82%.