Double cascade dressed MOSFET from doped Eu 3+ and Pr 3+ in a host YPO 4 .

In this paper, we study double cascade dressed optical metal oxide semiconductor field-effect transistor (MOSFET) by exploiting enhancement and suppression for mixed-phase (hexagonal + tetragonal) of Eu 3+ :YPO 4 and different phases (hexagonal + tetragonal and pure tetragonal) of Pr 3+ :YPO 4 crystals. We report variation of fine structure energy levels in different doped ions (Eu 3+ and Pr 3+ ) in the host YPO crystal. We compared multi-level energy transition from a single dressing laser with single level energy transition from double cascade dressing lasers. Gate delay facilitates multi-energy level dressed transition and is modeled through a Hamiltonian. Based on the results of double cascade dressing, we have realized MOSFET for logic gates (inverter and logic not and gate) with a switching contrast of about 92% using a mixed phase of Pr 3+ :YPO 4 .