Atomic Structure of Dislocations and Grain Boundaries in Two-Dimensional PtSe2.
Jun ChenYanming WangWenshuo XuYi WenGyeong Hee RyuJeffrey C GrossmanJamie H WarnerPublished in: ACS nano (2021)
Each 2D material has a distinct structure for its grain boundary and dislocation cores, which is dictated by both the crystal lattice geometry and the elements that participate in bonding. For the class of noble metal dichalcogenides, this has yet to be thoroughly investigated at the atomic scale. Here, we examine the atomic structure of the dislocations and grain boundaries (GBs) in two-dimensional PtSe2, using atomic-resolution annular dark field scanning transmission electron microscopy, combined with density functional theory and empirical force field calculations. The PtSe2 we study adopts the 1T phase in large-area polycrystalline films with numerous planar tilt GB distinct dislocations, including 5|7+Se and 4|4|8+Se polygons, in tilt-angle monolayer GBs, with features sharply distinguished from those in 2H-phase TMDs. On the basis of dislocation cores, the GB structures are investigated in terms of pathways of dislocation chain arrangement, dislocation core distributions in different misorientation angles, and 2D strain fields induced. Based on the Frank-Bilby equation, the deduced Burgers vector magnitude is close to the lattice constant of 1T-PtSe2, building the quantitative relationship of dislocation spacings and small GB angles. The 30° GBs are most frequently formed as a stitched interface between the armchair and zigzag lattices, constructed by a string of 5|7+Se dislocations asymmetrically with a small deviation angle. Another special angle GB, mirror twin 60° GB, is also mapped linearly by metal-condensed asymmetric or Se-rich symmetric dislocations. This report gives atomic-level insights into the GBs and dislocations in 1T-phase noble metal TMD PtSe2, which is a promising material to underpin extending properties of 2D materials by local structure engineering.