Benoit Bakeroot

ResearcherID ORCID

Publication Activity (10 Years)

Years Active: 2020-2021
Publications (10 Years): 4

Top Topics

Tandem Mass Spectrometry

Top Venues

Materials (Basel, Switzerland)

Ghent University

Ghent University (PHD)

This page only lists publications with an associated author ORCID identifier.

Affiliation History

Ghent University Oct 01 2012

Belgium

Researcher/Professor :: CMST / ELIS

imec Oct 01 1998

Belgium

Researcher :: CMST

Education History

Ghent University Oct 01 1998 - Jun 25 2004

Belgium

PHD :: ELIS

Ghent University Oct 01 1995 - Jul 02 1997

Belgium

MSC

Ghent University Oct 01 1993 - Jul 05 1995

Belgium

BSC

Publications

Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. Micromachines 12 (2) (2021)
Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. Materials (Basel, Switzerland) 14 (9) (2021)
Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines 12 (4) (2021)
Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials (Basel, Switzerland) 13 (21) (2020)