Matteo Meneghini

Scopus Author ID ORCID

Publication Activity (10 Years)

Years Active: 2019-2022
Publications (10 Years): 9

Top Topics

Magnetic Nanoparticles

Top Venues

Materials (Basel, Switzerland)

Scientific reports

This page only lists publications with an associated author ORCID identifier.

Publications

Claudia Casu, Matteo Buffolo, Alessandro Caria, Carlo De Santi, Enrico Zanoni, Gaudenzio Meneghesso, Matteo Meneghini
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode. Micromachines 13 (8) (2022)
Matteo Buffolo, Alessandro Magri, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Gradual Degradation of InGaAs LEDs: Impact on Non-Radiative Lifetime and Extraction of Defect Characteristics. Materials (Basel, Switzerland) 14 (5) (2021)
Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Karen Geens, Shuzhen You, Benoit Bakeroot, Stefaan Decoutere, Patrick Diehle, Susanne Hübner, Frank Altmann, Matteo Buffolo, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization. Materials (Basel, Switzerland) 14 (9) (2021)
Nicola Trivellin, Matteo Buffolo, Francesco Onelia, Alberto Pizzolato, Marco Barbato, Viviana Teresa Orlandi, Claudia Del Vecchio, Fabrizio Dughiero, Enrico Zanoni, Gaudenzio Meneghesso, Andrea Crisanti, Matteo Meneghini
Inactivating SARS-CoV-2 Using 275 nm UV-C LEDs through a Spherical Irradiation Box: Design, Characterization and Validation. Materials (Basel, Switzerland) 14 (9) (2021)
Kalparupa Mukherjee, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n-n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines 12 (4) (2021)
Alaleh Tajalli, Matteo Meneghini, Sven Besendörfer, Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications. Materials (Basel, Switzerland) 13 (19) (2020)
Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability. Materials (Basel, Switzerland) 13 (21) (2020)
Alaleh Tajalli, Matteo Borga, Matteo Meneghini, Carlo De Santi, Davide Benazzi, Sven Besendörfer, Roland Püsche, Joff Derluyn, Stefan Degroote, Marianne Germain, Riad Kabouche, Idriss Abid, Elke Meissner, Enrico Zanoni, Farid Medjdoub, Gaudenzio Meneghesso
Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment. Micromachines 11 (1) (2020)
Muhammad Fahlesa Fatahilah, Feng Yu, Klaas Strempel, Friedhard Römer, Dario Maradan, Matteo Meneghini, Andrey Bakin, Frank Hohls, Hans Werner Schumacher, Bernd Witzigmann, Andreas Waag, Hutomo Suryo Wasisto
Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics. Scientific reports 9 (1) (2019)