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Cheol Seong Hwang (C S Hwang)

ORCID

Publication Activity (10 Years)

Years Active: 2016-2023
Publications (10 Years): 48

Top Venues

ACS applied materials & interfaces

Advanced materials (Deerfield Beach, Fla.)

Nanoscale

Nature communications

Seoul National University

Seoul National University (PHD)

This page only lists publications with an associated author ORCID identifier.

Affiliation History

Seoul National University Jan 1o 1998

South Korea

Professor :: Materials Science and Engineering

Education History

Seoul National University Mar 1o 1989 - Mar 1o 1993

South Korea

PHD :: Materials Science and Engineering

Publications

Kyung Do Kim, Yong Bin Lee, Suk Hyun Lee, In Soo Lee, Seung Kyu Ryoo, Seung Yong Byun, Jae Hoon Lee, Cheol Seong Hwang
Impact of operation voltage and NH 3 annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering. Nanoscale (2023)
Yoon Ho Jang, Soo Hyung Lee, Janguk Han, Woohyun Kim, Sung Keun Shim, Sunwoo Cheong, Kyung Seok Woo, Joon-Kyu Han, Cheol Seong Hwang
Spatiotemporal Data Processing with Memristor Crossbar Array-Based Graph Reservoir. Advanced materials (Deerfield Beach, Fla.) (2023)
Yoon Ho Jang, Janguk Han, Jihun Kim, Woohyun Kim, Kyung Seok Woo, Jaehyun Kim, Cheol Seong Hwang
Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar Array. Advanced materials (Deerfield Beach, Fla.) 35 (10) (2023)
Yoon Ho Jang, Joon-Kyu Han, Sangik Moon, Sung Keun Shim, Janguk Han, Sunwoo Cheong, Soo Hyung Lee, Cheol Seong Hwang
A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high-performance neuromorphic machine vision. Materials horizons (2023)
Taegyun Park, Seung Soo Kim, Byeol Jun Lee, Tae Won Park, Hae Jin Kim, Cheol Seong Hwang
Highly parallel stateful Boolean logic gates based on aluminum-doped self-rectifying memristors in a vertical crossbar array structure. Nanoscale (2023)
Yoon Ho Jang, Janguk Han, Jihun Kim, Woohyun Kim, Kyung Seok Woo, Jaehyun Kim, Cheol Seong Hwang
Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar Array. Advanced materials (Deerfield Beach, Fla.) 35 (10) (2023)
Yan Cheng, Zhaomeng Gao, Kun Hee Ye, Hyeon Woo Park, Yonghui Zheng, Yunzhe Zheng, Jianfeng Gao, Min Hyuk Park, Seung Cheol Lee, Kan-Hao Xue, Cheol Seong Hwang, Hangbing Lyu
Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO 2 -based ferroelectric thin film. Nature communications 13 (1) (2022)
Kyung Seok Woo, Jaehyun Kim, Janguk Han, Woohyun Kim, Yoon Ho Jang, Cheol Seong Hwang
Probabilistic computing using Cu 0.1 Te 0.9 /HfO 2 /Pt diffusive memristors. Nature communications 13 (1) (2022)
Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, Yan Cheng, Gyuseung Han, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Woohyun Kim, Yonghui Zheng, Jongho Lee, Junku Ahn, Sunglae Cho, Scott B Clendenning, Ilya V Karpov, Yoon Kyung Lee, Jung-Hae Choi, Cheol Seong Hwang
Atomic Layer Deposition of Sb 2 Te 3 /GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory. Advanced materials (Deerfield Beach, Fla.) (2022)
Yoon Ho Jang, Janguk Han, Jihun Kim, Woohyun Kim, Kyung Seok Woo, Jaehyun Kim, Cheol Seong Hwang
Graph Analysis with Multi-Functional Self-Rectifying Memristive Crossbar Array. Advanced materials (Deerfield Beach, Fla.) (2022)
Yoon Ho Jang, Janguk Han, Jihun Kim, Woohyun Kim, Kyung Seok Woo, Jaehyun Kim, Cheol Seong Hwang
Graph Analysis with Multifunctional Self-Rectifying Memristive Crossbar Array. Advanced materials (Deerfield Beach, Fla.) (2022)
Seung Soo Kim, Soo Kyeom Yong, Whayoung Kim, Sukin Kang, Hyeon Woo Park, Kyung Jean Yoon, Dong Sun Sheen, Seho Lee, Cheol Seong Hwang
Review of Semiconductor Flash Memory Devices for Material and Process Issues. Advanced materials (Deerfield Beach, Fla.) (2022)
Jeong Woo Jeon, Chanyoung Yoo, Woohyun Kim, Wonho Choi, Byongwoo Park, Yoon Kyeung Lee, Cheol Seong Hwang
Atomic layer deposition of SnSe x thin films using Sn(N(CH 3 ) 2 ) 4 and Se(Si(CH 3 ) 3 ) 2 with NH 3 co-injection. Dalton transactions (Cambridge, England : 2003) 51 (2) (2022)
Juseong Park, Jungwoo Choi, Gwangmin Kim, Geunyoung Kim, Gil Seop Kim, Hanchan Song, Yeong Seok Kim, Younghyun Lee, Hakseung Rhee, Hyuck Mo Lee, Cheol Seong Hwang, Kyung Min Kim
Modified Dynamic Physical Model of Valence Change Mechanism Memristors. ACS applied materials & interfaces 14 (31) (2022)
Yu Yan, Jia Cheng Li, Yu Ting Chen, Xiang Yu Wang, Gang Ri Cai, Hyeon Woo Park, Ji Hun Kim, Jin Shi Zhao, Cheol Seong Hwang
Area-Type Electronic Bipolar Switching Al/TiO1.7/TiO2/Al Memory with Linear Potentiation and Depression Characteristics. ACS applied materials & interfaces 13 (33) (2021)
Yoon Ho Jang, Woohyun Kim, Jihun Kim, Kyung Seok Woo, Hyun Jae Lee, Jeong Woo Jeon, Sung Keun Shim, Janguk Han, Cheol Seong Hwang
Time-varying data processing with nonvolatile memristor-based temporal kernel. Nature communications 12 (1) (2021)
Dae Seon Kwon, Woojin Jeon, Dong Gun Kim, Tae Kyun Kim, Haengha Seo, Junil Lim, Cheol Seong Hwang
Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method. ACS applied materials & interfaces 13 (20) (2021)
Aleksandra A Koroleva, Anna G Chernikova, Anastasia A Chouprik, Evgeny S Gornev, Aleksandr S Slavich, Roman R Khakimov, Evgeny V Korostylev, Cheol Seong Hwang, Andrey M Markeev
Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures. ACS applied materials & interfaces 12 (49) (2020)
Yuting Chen, Yu Yan, Jianwen Wu, Chen Wang, Jun Ye Lin, Jin Shi Zhao, Cheol Seong Hwang
Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx Film. ACS applied materials & interfaces 12 (9) (2020)
Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Eui-Sang Park, Manick Ha, Yoon Kyeung Lee, Cheol Seong Hwang
Atomic Layer Deposition of GexSe1-x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage. ACS applied materials & interfaces 12 (20) (2020)
An Quan Jiang, Wen Ping Geng, Peng Lv, Jia-Wang Hong, Jun Jiang, Chao Wang, Xiao Jie Chai, Jian Wei Lian, Yan Zhang, Rong Huang, David Wei Zhang, James F Scott, Cheol Seong Hwang
Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers. Nature materials 19 (11) (2020)
Venkata Raveendra Nallagatla, Jihun Kim, Kyoungjun Lee, Seung Chul Chae, Cheol Seong Hwang, Chang Uk Jung
Complementary Resistive Switching and Synaptic-Like Memory Behavior in an Epitaxial SrFeO2.5 Thin Film through Oriented Oxygen-Vacancy Channels. ACS applied materials & interfaces 12 (37) (2020)
Min Hyuk Park, Young Hwan Lee, Cheol Seong Hwang
Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory. Nanoscale 11 (41) (2019)
Kyung Jean Yoon, Jin-Woo Han, Dong-Il Moon, Myeong-Lok Seol, M Meyyappan, Han Joon Kim, Cheol Seong Hwang
Electrically-generated memristor based on inkjet printed silver nanoparticles. Nanoscale advances 1 (8) (2019)
Gil Seop Kim, Hanchan Song, Yoon Kyeung Lee, Ji Hun Kim, Woohyun Kim, Tae Hyung Park, Hae Jin Kim, Kyung Min Kim, Cheol Seong Hwang
Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network. ACS applied materials & interfaces 11 (50) (2019)
Hyeon Woo Park, Jangho Roh, Yong Bin Lee, Cheol Seong Hwang
Modeling of Negative Capacitance in Ferroelectric Thin Films. Advanced materials (Deerfield Beach, Fla.) 31 (32) (2019)
In-Hwan Baek, Jung Joon Pyeon, Seong Ho Han, Ga-Yeon Lee, Byung Joon Choi, Jeong Hwan Han, Taek-Mo Chung, Cheol Seong Hwang, Seong Keun Kim
High-Performance Thin-Film Transistors of Quaternary Indium-Zinc-Tin Oxide Films Grown by Atomic Layer Deposition. ACS applied materials & interfaces 11 (16) (2019)
Woohyun Kim, Chanyoung Yoo, Eui-Sang Park, Manick Ha, Jeong Woo Jeon, Gil Seop Kim, Kyung Seok Woo, Yoon Kyeung Lee, Cheol Seong Hwang
Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode. ACS applied materials & interfaces 11 (42) (2019)
Maxim G Kozodaev, Y Y Lebedinskii, Anna G Chernikova, E V Korostylev, Anastasia A Chouprik, R R Khakimov, Andrey M Markeev, Cheol Seong Hwang
Temperature controlled Ru and RuO2 growth via O* radical-enhanced atomic layer deposition with Ru(EtCp)2. The Journal of chemical physics 151 (20) (2019)
Xiang Yuan Li, Xing Long Shao, Yi Chuan Wang, Hao Jiang, Cheol Seong Hwang, Jin Shi Zhao
Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory. Nanoscale 9 (6) (2018)
Yumin Kim, Young Jae Kwon, Dae Eun Kwon, Kyung Jean Yoon, Jung Ho Yoon, Sijung Yoo, Hae Jin Kim, Tae Hyung Park, Jin-Woo Han, Kyung Min Kim, Cheol Seong Hwang
Nociceptive Memristor. Advanced materials (Deerfield Beach, Fla.) 30 (8) (2018)
Tae Hyung Park, Young Jae Kwon, Hae Jin Kim, Hyo Cheon Woo, Gil Seop Kim, Cheol Hyun An, Yumin Kim, Dae Eun Kwon, Cheol Seong Hwang
Balancing the Source and Sink of Oxygen Vacancies for the Resistive Switching Memory. ACS applied materials & interfaces 10 (25) (2018)
Susant Kumar Acharya, Janghyun Jo, Nallagatlla Venkata Raveendra, Umasankar Dash, Miyoung Kim, Hionsuck Baik, Sangik Lee, Bae Ho Park, Jae Sung Lee, Seung Chul Chae, Cheol Seong Hwang, Chang Uk Jung
Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory. Nanoscale 9 (29) (2018)
Jinshi Zhao, Ming Zhang, Shangfei Wan, Zhengchun Yang, Cheol Seong Hwang
Highly Flexible Resistive Switching Memory Based on the Electronic Switching Mechanism in the Al/TiO2/Al/Polyimide Structure. ACS applied materials & interfaces 10 (2) (2018)
Anna G Chernikova, Maxim G Kozodaev, Dmitry V Negrov, Evgeny V Korostylev, Min Hyuk Park, Uwe Schroeder, Cheol Seong Hwang, Andrey M Markeev
Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films. ACS applied materials & interfaces 10 (3) (2018)
Jung Ho Yoon, Zhongrui Wang, Kyung Min Kim, Huaqiang Wu, Vignesh Ravichandran, Qiangfei Xia, Cheol Seong Hwang, J Joshua Yang
An artificial nociceptor based on a diffusive memristor. Nature communications 9 (1) (2018)
Min Jung Chung, Woojin Jeon, Cheol Hyun An, Sang Hyeon Kim, Yoon Kyeung Lee, Woongkyu Lee, Cheol Seong Hwang
Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO3 Thin Films. ACS applied materials & interfaces 10 (10) (2018)
Hehe Zhang, Sijung Yoo, Stephan Menzel, Carsten Funck, Felix Cüppers, Dirk J Wouters, Cheol Seong Hwang, Rainer Waser, Susanne Hoffmann-Eifert
Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices. ACS applied materials & interfaces 10 (35) (2018)
Seung Dam Hyun, Hyeon Woo Park, Yu Jin Kim, Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Young Jae Kwon, Taehwan Moon, Keum Do Kim, Yong Bin Lee, Baek Su Kim, Cheol Seong Hwang
Dispersion in Ferroelectric Switching Performance of Polycrystalline Hf0.5Zr0.5O2 Thin Films. ACS applied materials & interfaces 10 (41) (2018)
Doo Seok Jeong, Cheol Seong Hwang
Nonvolatile Memory Materials for Neuromorphic Intelligent Machines. Advanced materials (Deerfield Beach, Fla.) 30 (42) (2018)
Seung Jun Lee, Younjin Jang, Han Joon Kim, Eun Suk Hwang, Seok Min Jeon, Jun Shik Kim, Taehwan Moon, Kyung-Tae Jang, Young-Chang Joo, Deok-Yong Cho, Cheol Seong Hwang
Composition, Microstructure, and Electrical Performance of Sputtered SnO Thin Films for p-Type Oxide Semiconductor. ACS applied materials & interfaces 10 (4) (2018)
Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Cheol Seong Hwang
Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications. ACS applied materials & interfaces 10 (48) (2018)
Min Hyuk Park, Young Hwan Lee, Han Joon Kim, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang
Morphotropic Phase Boundary of Hf1- xZr xO2 Thin Films for Dynamic Random Access Memories. ACS applied materials & interfaces 10 (49) (2018)
Jun Jiang, Zi Long Bai, Zhi Hui Chen, Long He, David Wei Zhang, Qing Hua Zhang, Jin An Shi, Min Hyuk Park, James F Scott, Cheol Seong Hwang, An Quan Jiang
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories. Nature materials 17 (1) (2017)
Konstantin V Egorov, Dmitry S Kuzmichev, Pavel S Chizhov, Yuri Yu Lebedinskii, Cheol Seong Hwang, Andrey M Markeev
In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications. ACS applied materials & interfaces 9 (15) (2017)
Yu Jin Kim, Hyeon Woo Park, Seung Dam Hyun, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Taehwan Moon, Yong Bin Lee, Min Hyuk Park, Cheol Seong Hwang
Voltage Drop in a Ferroelectric Single Layer Capacitor by Retarded Domain Nucleation. Nano letters 17 (12) (2017)
Taehong Gwon, Ahmed Yousef Mohamed, Chanyoung Yoo, Eui-Sang Park, Sanggyun Kim, Sijung Yoo, Han-Koo Lee, Deok-Yong Cho, Cheol Seong Hwang
Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition. ACS applied materials & interfaces 9 (47) (2017)
Seul Ji Song, Taehyung Park, Kyung Jean Yoon, Jung Ho Yoon, Dae Eun Kwon, Wontae Noh, Clement Lansalot-Matras, Satoko Gatineau, Han-Koo Lee, Sanjeev Gautam, Deok-Yong Cho, Sang Woon Lee, Cheol Seong Hwang
Comparison of the Atomic Layer Deposition of Tantalum Oxide Thin Films Using Ta(NtBu)(NEt2)3, Ta(NtBu)(NEt2)2Cp, and H2O. ACS applied materials & interfaces 9 (1) (2016)

Cheol Seong Hwang.css-eqlu8i{font-size:small;padding-left:4px;} (C S Hwang)

Publication Activity (10 Years)

Top Topics

Top Venues

Cheol Seong Hwang (C S Hwang)