Implementation of Bayesian networks and Bayesian inference using a Cu 0.1 Te 0.9 /HfO 2 /Pt threshold switching memristor.
In Kyung BaekSoo Hyung LeeYoon Ho JangHyungjun ParkJaehyun KimSunwoo CheongSung Keun ShimJanguk HanJoon-Kyu HanGwang Sik JeonDong Hoon ShinKyung Seok WooCheol Seong HwangPublished in: Nanoscale advances (2024)
Bayesian networks and Bayesian inference, which forecast uncertain causal relationships within a stochastic framework, are used in various artificial intelligence applications. However, implementing hardware circuits for the Bayesian inference has shortcomings regarding device performance and circuit complexity. This work proposed a Bayesian network and inference circuit using a Cu 0.1 Te 0.9 /HfO 2 /Pt volatile memristor, a probabilistic bit neuron that can control the probability of being 'true' or 'false.' Nodal probabilities within the network are feasibly sampled with low errors, even with the device's cycle-to-cycle variations. Furthermore, Bayesian inference of all conditional probabilities within the network is implemented with low power (<186 nW) and energy consumption (441.4 fJ), and a normalized mean squared error of ∼7.5 × 10 -4 through division feedback logic with a variational learning rate to suppress the inherent variation of the memristor. The suggested memristor-based Bayesian network shows the potential to replace the conventional complementary metal oxide semiconductor-based Bayesian estimation method with power efficiency using a stochastic computing method.