Do Minh Hoat (Doh M Hoat, D M Hoat)

Publication Activity (10 Years)

Years Active: 2020-2024
Publications (10 Years): 41

Top Topics

Molecularly Imprinted

Highly Efficient

Molecular Dynamics

Top Venues

Physical chemistry chemical physics : PCCP

Nanoscale advances

Journal of physics. Condensed matter : an Institute of Physics journal

This page only lists publications with an associated author ORCID identifier.

Publications

Do Minh Hoat, R Ponce-Pérez, Chu Viet Ha, J Guerrero-Sanchez
Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms. Nanoscale advances 6 (14) (2024)
Nguyen Duy Khanh, R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications. RSC advances 14 (27) (2024)
Do Minh Hoat, Vo Van On, Phan Van Huan, J Guerrero-Sanchez
Realizing new 2D spintronic materials from the non-magnetic 1T-PdO 2 monolayer through vacancy defects and doping. RSC advances 14 (10) (2024)
Vo Van On, J Guerrero-Sanchez, Do Minh Hoat
Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping. Physical chemistry chemical physics : PCCP 26 (4) (2024)
Nguyen Thanh Tien, J Guerrero-Sanchez, Do Minh Hoat
A systematic study of TMO n (TM = V, Cr, Mn, and Fe; n = 3 and 6) clusters embedded in a PtS 2 monolayer. Nanoscale advances (2024)
Phuong Thuy Bui, Vo Van On, J Guerrero-Sanchez, Do Minh Hoat
Electronic and magnetic properties of GeS monolayer effected by point defects and doping. RSC advances 14 (4) (2024)
Do Minh Hoat, Vo Van On, Phan Van Huan, J Guerrero-Sanchez
Realizing new 2D spintronic materials from the non-magnetic 1T-PdO 2 monolayer through vacancy defects and doping. RSC advances 14 (10) (2024)
Do Minh Hoat, J Guerrero-Sanchez
n/p-Doping in a buckled honeycomb InAs monolayer using IVA-group impurities. Nanoscale advances 6 (6) (2024)
Nguyen Duy Khanh, Nguyen Thanh Tien, J Guerrero-Sanchez, Do Minh Hoat
A systematic investigation of chromium and vanadium impurities in a Janus Ga 2 SO monolayer towards spintronic applications. Physical chemistry chemical physics : PCCP 26 (26) (2024)
Do Minh Hoat, R Ponce-Pérez, Chu Viet Ha, J Guerrero-Sanchez
Controlling the electronic and magnetic properties of the GeAs monolayer by generating Ge vacancies and doping with transition-metal atoms. Nanoscale advances 6 (14) (2024)
Phuong Thuy Bui, Vo Van On, J Guerrero-Sanchez, Do Minh Hoat
Electronic and magnetic properties of GeS monolayer effected by point defects and doping. RSC advances 14 (4) (2024)
Nguyen Duy Khanh, Nguyen Thanh Tien, J Guerrero-Sanchez, Do Minh Hoat
A systematic investigation of chromium and vanadium impurities in a Janus Ga 2 SO monolayer towards spintronic applications. Physical chemistry chemical physics : PCCP 26 (26) (2024)
Nguyen Duy Khanh, Nguyen Thanh Tien, J Guerrero-Sanchez, Do Minh Hoat
A systematic investigation of chromium and vanadium impurities in a Janus Ga 2 SO monolayer towards spintronic applications. Physical chemistry chemical physics : PCCP (2024)
Vo Van On, J Guerrero-Sanchez, Do Minh Hoat
Modifying the electronic and magnetic properties of the scandium nitride semiconductor monolayer via vacancies and doping. Physical chemistry chemical physics : PCCP (2024)
Do Minh Hoat, Nguyen Thanh Tien, Nguyen Duy Khanh, J Guerrero-Sanchez
Antiferromagnetism in GaS monolayer doped with TM-TM atom pairs (TM = V, Cr, Mn, and Fe). Physical chemistry chemical physics : PCCP 26 (27) (2024)
Do Minh Hoat, Nguyen Thanh Tien, Nguyen Duy Khanh, J Guerrero-Sanchez
Antiferromagnetism in GaS monolayer doped with TM-TM atom pairs (TM = V, Cr, Mn, and Fe). Physical chemistry chemical physics : PCCP (2024)
Do Minh Hoat, J Guerrero-Sanchez
n/p-Doping in a buckled honeycomb InAs monolayer using IVA-group impurities. Nanoscale advances 6 (6) (2024)
Nguyen Duy Khanh, R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications. RSC advances 14 (27) (2024)
Chu Viet Ha, Bich Ngoc Nguyen Thi, Pham Quynh Trang, R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Novel germanene-arsenene and germanene-antimonene lateral heterostructures: interline-dependent electronic and magnetic properties. Physical chemistry chemical physics : PCCP (2023)
Duy Khanh Nguyen, To Vinh Bao, Nguyen Anh Kha, R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Searching for d 0 spintronic materials: bismuthene monolayer doped with IVA-group atoms. RSC advances 13 (9) (2023)
Chu Viet Ha, L T Ha, Do Thi Hue, Duy Khanh Nguyen, Dang Tuan Anh, J Guerrero-Sanchez, Do Minh Hoat
First-principles study of SiC and GeC monolayers with adsorbed non-metal atoms. RSC advances 13 (22) (2023)
Duy Khanh Nguyen, R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Surface functionalization of graphene-like boron arsenide monolayer: A ﬁrst-principles study. Journal of physics. Condensed matter : an Institute of Physics journal (2023)
Bich Ngoc Nguyen Thi, Chu Viet Ha, Nghiem Thi Ha Lien, J Guerrero-Sanchez, Do Minh Hoat
Doping-mediated electronic and magnetic properties of graphene-like ionic NaX (X = F and Cl) monolayers. Physical chemistry chemical physics : PCCP (2023)
Chu Viet Ha, L T Ha, Do Thi Hue, Duy Khanh Nguyen, Dang Tuan Anh, J Guerrero-Sanchez, Do Minh Hoat
First-principles study of SiC and GeC monolayers with adsorbed non-metal atoms. RSC advances 13 (22) (2023)
R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Half-metallic and magnetic semiconductor behavior in CdO monolayer induced by acceptor impurities. Physical chemistry chemical physics : PCCP (2023)
Huynh Anh Huy, Duy Khanh Nguyen, Chu Viet Ha, Dang Duc Toan, Hang Nga Nguyen, J Guerrero Sanchez, Do Minh Hoat
Functionalization of an ionic honeycomb KF monolayer via doping. Nanoscale advances 5 (17) (2023)
Duy Khanh Nguyen, To Vinh Bao, Nguyen Anh Kha, R Ponce-Pérez, J Guerrero-Sanchez, Do Minh Hoat
Searching for d 0 spintronic materials: bismuthene monolayer doped with IVA-group atoms. RSC advances 13 (9) (2023)
Chu Viet Ha, L T Ha, Do Thi Hue, Duy Khanh Nguyen, Dang Tuan Anh, J Guerrero-Sanchez, Do Minh Hoat
First-principles study of SiC and GeC monolayers with adsorbed non-metal atoms. RSC advances 13 (22) (2023)
Vo Van On, Chu Viet Ha, Dang Tuan Anh, J Guerrero-Sanchez, Do Minh Hoat
Designing doping strategy in arsenene monolayer for spintronic and optoelectronic applications: a case study of germanium and nitrogen as dopants. Journal of physics. Condensed matter : an Institute of Physics journal 34 (35) (2022)
Duy Khanh Nguyen, Tuan V Vu, Do Minh Hoat
Antiferromagnetic ordering in the TM-adsorbed AlN monolayer (TM = V and Cr). RSC advances 12 (26) (2022)
Duy Khanh Nguyen, J Guerrero-Sanchez, Do Minh Hoat
Introducing the 1H-Na 2 S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties. Physical chemistry chemical physics : PCCP 24 (44) (2022)
Vo Van On, J Guerrero-Sanchez, R Ponce-Pérez, J F Rivas-Silva, Gregorio H Cocoletzi, Do Minh Hoat
Ferromagnetic half-metallicity of the cubic NaMgO 3 perovskite: from bulk to (001) surfaces. Physical chemistry chemical physics : PCCP 24 (4) (2022)
Duy Khanh Nguyen, Duc-Quang Hoang, Do Minh Hoat
Exploring a silicene monolayer as a promising sensor platform to detect and capture NO and CO gas. RSC advances 12 (16) (2022)
Tuan V Vu, Duy Khanh Nguyen, J Guerrero-Sanchez, J F Rivas-Silva, Gregorio H Cocoletzi, Do Minh Hoat
A new family of NaTMGe (TM = 3d transition metals) half-Heusler compounds: the role of TM modification. RSC advances 12 (40) (2022)
Do Minh Hoat, Duy Khanh Nguyen, J Guerrero-Sanchez, R Ponce-Pérez, J F Rivas-Silva, Vo Van On, Gregorio H Cocoletzi
Nitrogen doping and oxygen vacancy effects on the fundamental properties of BeO monolayer: a DFT study. Journal of physics. Condensed matter : an Institute of Physics journal 33 (32) (2021)
Asadollah Bafekry, Mehrdad Faraji, Mohamed M Fadlallah, Do Minh Hoat, Hamad Rahman Jappor, I Abdolhosseini Sarsari, M Ghergherehchi, S A H Feghhi
Electronic, optical and thermoelectric properties of a novel two-dimensional SbXY (X = Se, Te; Y = Br, I) family: ab initio perspective. Physical chemistry chemical physics : PCCP 23 (45) (2021)
Duy Khanh Nguyen, J Guerrero-Sanchez, Vo Van On, J F Rivas-Silva, R Ponce-Pérez, Gregorio H Cocoletzi, Do Minh Hoat
Tuning MoSO monolayer properties for optoelectronic and spintronic applications: effect of external strain, vacancies and doping. RSC advances 11 (56) (2021)
A Bafekry, Mehrdad Faraji, Mohamed M Fadlallah, Do Minh Hoat, A Bagheri Khatibani, I Abdolhosseini Sarsari, M Ghergherehchi
Effect of adsorption and substitutional B doping at different concentrations on the electronic and magnetic properties of a BeO monolayer: a first-principles study. Physical chemistry chemical physics : PCCP 23 (43) (2021)
Asadollah Bafekry, Fazel Shojai, Do Minh Hoat, Masoud Shahrokhi, Mitra Ghergherehchi, Chuong V Nguyen
The mechanical, electronic, optical and thermoelectric properties of two-dimensional honeycomb-like of XSb (X = Si, Ge, Sn) monolayers: a first-principles calculations. RSC advances 10 (51) (2020)
Do Minh Hoat, Duc-Quang Hoang, Mosayeb Naseri, J F Rivas-Silva, A I Kartamyshev, Gregorio H Cocoletzi
Computational prediction of the spin-polarized semiconductor equiatomic quaternary Heusler compound MnVZrP as a spin-filter. RSC advances 10 (43) (2020)
Do Minh Hoat, Vo Van On, Duy Khanh Nguyen, Mosayeb Naseri, R Ponce-Pérez, Tuan V Vu, J F Rivas-Silva, Nguyen N Hieu, Gregorio H Cocoletzi
Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study. RSC advances 10 (66) (2020)