Nguyen N Hieu (N N Hieu)

Publication Activity (10 Years)

Years Active: 2019-2024
Publications (10 Years): 60

Top Topics

Density Functional Theory

Walled Carbon Nanotubes

Highly Efficient

Crystal Structure

Top Venues

Physical chemistry chemical physics : PCCP

Nanoscale advances

Journal of physics. Condensed matter : an Institute of Physics journal

This page only lists publications with an associated author ORCID identifier.

Publications

Son T Nguyen, Nguyen Dang Khang, Nguyen N Hieu, Huynh V Phuc, Chuong V Nguyen
Controllable electronic properties, contact barriers and contact types in a TaSe 2 /WSe 2 metal-semiconductor heterostructure. Physical chemistry chemical physics : PCCP (2024)
Tuan V Vu, Huynh V Phuc, Le Thi Thu Phuong, Vo T T Vi, A I Kartamyshev, Nguyen N Hieu
Large piezoelectric responses and ultra-high carrier mobility in Janus HfGeZ 3 H (Z = N, P, As) monolayers: a first-principles study. Nanoscale advances 6 (16) (2024)
Nguyen P Q Anh, N A Poklonski, Vo T T Vi, Nguyen Dang Khang, Nguyen N Hieu
Two-dimensional Janus Si 2 OX (X = S, Se, Te) monolayers as auxetic semiconductors: theoretical prediction. RSC advances 14 (7) (2024)
P H Nha, Chuong V Nguyen, Nguyen N Hieu, Huynh V Phuc, Nguyen Dang Khang
Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS 2 /Janus MoSSe van der Waals heterostructure. Nanoscale advances 6 (4) (2024)
Son T Nguyen, Nguyen Dang Khang, Nguyen N Hieu, Huynh V Phuc, Chuong V Nguyen
Controllable electronic properties, contact barriers and contact types in a TaSe 2 /WSe 2 metal-semiconductor heterostructure. Physical chemistry chemical physics : PCCP 26 (12) (2024)
Son T Nguyen, Chuong V Nguyen, Huynh V Phuc, Nguyen N Hieu, Nguyen Dang Khang
Achieving ultra-low contact barriers in MX 2 /SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction. Nanoscale advances (2024)
Son T Nguyen, Chuong V Nguyen, Huynh V Phuc, Nguyen N Hieu, Nguyen Dang Khang
Achieving ultra-low contact barriers in MX 2 /SiH (M = Nb, Ta; X = S, Se) metal-semiconductor heterostructures: first-principles prediction. Nanoscale advances (2024)
Tuan V Vu, Andrey I Kartamyshev, Thi H Ho, Nguyen N Hieu, Huynh V Phuc, Son-Tung Nguyen, Chuong V Nguyen
Unveiling Versatile Electronic Properties and Contact Features of Metal-Semiconductor Graphene/γ-Ge 2 SSe van der Waals Heterostructures. Langmuir : the ACS journal of surfaces and colloids (2024)
Nguyen N Hieu, Huynh V Phuc, Bui Dinh Hoi
Electronic phase transition in bilayer P 6 mmm borophene. Physical chemistry chemical physics : PCCP (2024)
Nguyen N Hieu, Huynh V Phuc, Bui Dinh Hoi
Electronic phase transition in bilayer P 6 mmm borophene. Physical chemistry chemical physics : PCCP 26 (27) (2024)
Tuan V Vu, Vo T T Vi, Nguyen T Hiep, Khanh V Hoang, A I Kartamyshev, Huynh V Phuc, Nguyen N Hieu
A first-principles prediction of novel Janus ZrGeZ 3 H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility. RSC advances 14 (30) (2024)
Nguyen P Q Anh, N A Poklonski, Vo T T Vi, Nguyen Dang Khang, Nguyen N Hieu
Two-dimensional Janus Si 2 OX (X = S, Se, Te) monolayers as auxetic semiconductors: theoretical prediction. RSC advances 14 (7) (2024)
P H Nha, Chuong V Nguyen, Nguyen N Hieu, Huynh V Phuc, Nguyen Dang Khang
Theoretical prediction of electronic properties and contact barriers in a metal/semiconductor NbS 2 /Janus MoSSe van der Waals heterostructure. Nanoscale advances 6 (4) (2024)
Tuan V Vu, Huynh V Phuc, Le Thi Thu Phuong, Vo T T Vi, A I Kartamyshev, Nguyen N Hieu
Large piezoelectric responses and ultra-high carrier mobility in Janus HfGeZ 3 H (Z = N, P, As) monolayers: a first-principles study. Nanoscale advances 6 (16) (2024)
Tuan V Vu, Vo T T Vi, Nguyen T Hiep, Khanh V Hoang, A I Kartamyshev, Huynh V Phuc, Nguyen N Hieu
A first-principles prediction of novel Janus ZrGeZ 3 H (Z = N, P, and As) monolayers: Raman active modes, piezoelectric responses, electronic properties, and carrier mobility. RSC advances 14 (30) (2024)
Tuan V Vu, Vo D Dat, A A Lavrentyev, B V Gabrelian, Nguyen N Hieu, G L Myronchuk, Oleg Yu Khyzhun
Electronic and optical properties of thiogermanate AgGaGeS 4 : theory and experiment. RSC advances 13 (2) (2023)
Le C Nhan, Nguyen T Hiep, Nguyen Dang Khang, Nguyen N Hieu
Strain-induced phase transitions and high carrier mobility in two-dimensional Janus MGeSN 2 (M = Ti, Zr, and Hf) structures: first-principles calculations. Physical chemistry chemical physics : PCCP (2023)
Son-Tung Nguyen, Nguyen Dang Khang, Nguyen N Hieu, Huynh V Phuc, Chuong V Nguyen
First-principles investigations of metal-semiconductor MoSH@MoS 2 van der Waals heterostructures. Nanoscale advances 5 (18) (2023)
Tuan-Anh Tran, Le S Hai, Vo T T Vi, Nguyen Dang Khang, Nguyen T Nghiem, Le T P Thao, Nguyen N Hieu
Janus structures of the C 2h polymorph of gallium monochalcogenides: first-principles examination of Ga 2 XY (X/Y = S, Se, Te) monolayers. RSC advances 13 (18) (2023)
Son-Tung Nguyen, Cuong Q Nguyen, Nguyen N Hieu, Huynh V Phuc, Chuong V Nguyen
Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc 2 CF 2 Heterostructures toward Next-Generation Optoelectronic Devices. Langmuir : the ACS journal of surfaces and colloids (2023)
Nguyen T Hiep, Nguyen Dang Khang, Vo T T Vi, Nguyen N Hieu, Tran P T Linh
Moderate direct band-gap energies and high carrier mobilities of Janus XWSiP 2 (X = S, Se, Te) monolayers via first-principles investigation. Physical chemistry chemical physics : PCCP (2023)
Tran P T Linh, Nguyen V Hieu, Bui Dinh Hoi, Nguyen Dang Khang, Nguyen N Hieu
First-principles examination of two-dimensional Janus quintuple-layer atomic structures XCrSiN 2 (X = S, Se, and Te). Nanoscale advances 5 (11) (2023)
Tuan-Anh Tran, Le S Hai, Vo T T Vi, Nguyen Dang Khang, Nguyen T Nghiem, Le T P Thao, Nguyen N Hieu
Janus structures of the C 2h polymorph of gallium monochalcogenides: first-principles examination of Ga 2 XY (X/Y = S, Se, Te) monolayers. RSC advances 13 (18) (2023)
Nguyen P Q Anh, Nguyen T Hiep, D V Lu, Nguyen Dang Khang, Nguyen N Hieu, Vo T T Vi
Crystal lattice and electronic and transport properties of Janus ZrSiSZ 2 (Z = N, P, As) monolayers by first-principles investigations. Nanoscale advances 5 (23) (2023)
Le T Hoa, Shrishail S Kubakaddi, Chuong Nguyen, Nguyen N Hieu, Huynh V Phuc
Quantum magneto-transport properties of monolayers MoSi$_2$N$_4$, WSi$_2$N$_4$, and MoSi$_2$As$_4$. Journal of physics. Condensed matter : an Institute of Physics journal (2023)
Nguyen N Hieu, Chuong V Nguyen, Huynh V Phuc, Bui Dinh Hoi
On the impact of adsorbed gas molecules on the anisotropic electro-optical properties of β 12 -borophene. Physical chemistry chemical physics : PCCP (2023)
Nguyen T Hiep, Nguyen P Q Anh, Huynh V Phuc, Nguyen Dang Khang, Nguyen N Hieu, Vo T T Vi
Two-dimensional Janus MGeSiP 4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations. Physical chemistry chemical physics : PCCP 25 (12) (2023)
Tuan-Anh Tran, Le S Hai, Vo T T Vi, Nguyen Dang Khang, Nguyen T Nghiem, Le T P Thao, Nguyen N Hieu
Janus structures of the C 2h polymorph of gallium monochalcogenides: first-principles examination of Ga 2 XY (X/Y = S, Se, Te) monolayers. RSC advances 13 (18) (2023)
Tuan-Anh Tran, Le S Hai, Vo T T Vi, Nguyen Dang Khang, Nguyen T Nghiem, Le T P Thao, Nguyen N Hieu
Janus structures of the C 2h polymorph of gallium monochalcogenides: first-principles examination of Ga 2 XY (X/Y = S, Se, Te) monolayers. RSC advances 13 (18) (2023)
Nguyen T Hiep, Nguyen P Q Anh, Huynh V Phuc, Nguyen Dang Khang, Nguyen N Hieu, Vo T T Vi
Two-dimensional Janus MGeSiP 4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations. Physical chemistry chemical physics : PCCP 25 (12) (2023)
Nguyen T Hiep, Nguyen P Q Anh, Huynh V Phuc, Nguyen Dang Khang, Nguyen N Hieu, Vo T T Vi
Two-dimensional Janus MGeSiP 4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations. Physical chemistry chemical physics : PCCP (2023)
Tuan-Anh Tran, Le S Hai, Nguyen Dang Khang, Vo T T Vi, Tran P T Linh, Nguyen N Hieu
New C 2h phase of group III monochalcogenide monolayers AlX (X = S, Se, and Te) with anisotropic crystal structure: first-principles study. RSC advances 13 (10) (2023)
Tuan-Anh Tran, Le S Hai, Nguyen Dang Khang, Vo T T Vi, Tran P T Linh, Nguyen N Hieu
New C 2h phase of group III monochalcogenide monolayers AlX (X = S, Se, and Te) with anisotropic crystal structure: first-principles study. RSC advances 13 (10) (2023)
Tuan V Vu, Vo D Dat, A A Lavrentyev, B V Gabrelian, Nguyen N Hieu, G L Myronchuk, Oleg Yu Khyzhun
Electronic and optical properties of thiogermanate AgGaGeS 4 : theory and experiment. RSC advances 13 (2) (2023)
Vo D Dat, Tuan V Vu, A A Lavrentyev, Oleg Yu Khyzhun, Nguyen N Hieu, Hien D Tong
First-principles study on the structural properties of 2D MXene SnSiGeN 4 and its electronic properties under the effects of strain and an external electric field. RSC advances 12 (45) (2022)
Tuan V Vu, Huynh V Phuc, Sohail Ahmad, Bui Dinh Hoi, Nguyen V Hieu, Samah Al-Qaisi, A I Kartamyshev, Nguyen N Hieu
Theoretical prediction of Janus PdXO (X = S, Se, Te) monolayers: structural, electronic, and transport properties. RSC advances 12 (21) (2022)
Asadollah Bafekry, Mohamed M Fadlallah, Mehrdad Faraji, Nguyen N Hieu, Hamad R Jappor, Catherine Stampfl, Yee Sin Ang, Mitra Ghergherehchi
Puckered Penta-like PdPX (X = O, S, Te) Semiconducting Nanosheets: First-Principles Study of the Mechanical, Electro-Optical, and Photocatalytic Properties. ACS applied materials & interfaces 14 (18) (2022)
Tuan V Vu, Huynh V Phuc, Chuong V Nguyen, Vo T T Vi, A I Kartamyshev, Nguyen N Hieu
Rashba-type spin splitting and transport properties of novel Janus XWGeN 2 (X = O, S, Se, Te) monolayers. Physical chemistry chemical physics : PCCP 24 (27) (2022)
Tuan V Vu, A A Lavrentyev, O Y Khyzhun, Nguyen T T Binh, Nguyen V Hieu, A I Kartamyshev, Nguyen N Hieu
Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation. Physical chemistry chemical physics : PCCP 24 (47) (2022)
Nguyen V Hieu, Shrishail S Kubakaddi, Nguyen N Hieu, Huynh V Phuc
Magneto-optical absorption properties of topological insulator thin films. Journal of physics. Condensed matter : an Institute of Physics journal 34 (30) (2022)
Tuan V Vu, Nguyen N Hieu, A A Lavrentyev, Oleg Yu Khyzhun, Chu V Lanh, A I Kartamyshev, Huynh V Phuc, Nguyen V Hieu
Novel Janus GaInX 3 (X = S, Se, Te) single-layers: first-principles prediction on structural, electronic, and transport properties. RSC advances 12 (13) (2022)
Huynh V Phuc, Shrishail S Kubakaddi, Le Dinh, Tran N Bich, Nguyen N Hieu
Phonon-drag thermopower and thermoelectric performance of MoS 2 monolayer in quantizing magnetic field. Journal of physics. Condensed matter : an Institute of Physics journal 34 (31) (2022)
Tran P T Linh, Nguyen N Hieu, Huynh V Phuc, Nguyen Dang Khang, Pham T Vinh, Nguyen Q Thai, Nguyen V Hieu
First-principles insights onto structural, electronic and optical properties of Janus monolayers CrXO (X = S, Se, Te). RSC advances 11 (63) (2021)
Tuan V Vu, Nguyen N Hieu
Novel Janus group III chalcogenide monolayers Al 2 XY 2 (X/Y = S, Se, Te): first-principles insight onto the structural, electronic, and transport properties. Journal of physics. Condensed matter : an Institute of Physics journal 34 (11) (2021)
Tuan V Vu, Tran P T Linh, Huynh V Phuc, Carlos A Duque, A I Kartamyshev, Nguyen N Hieu
Structural, electronic, and transport properties of Janus GaInX2(X=S, Se, Te) monolayers: first-principles study. Journal of physics. Condensed matter : an Institute of Physics journal 34 (4) (2021)
Tuan V Vu, A I Kartamyshev, Nguyen V Hieu, Tran D H Dang, Sy-Ngoc Nguyen, N A Poklonski, Chuong V Nguyen, Huynh V Phuc, Nguyen N Hieu
Structural, elastic, and electronic properties of chemically functionalized boron phosphide monolayer. RSC advances 11 (15) (2021)
Asadollah Bafekry, M Faraji, Nguyen N Hieu, Yee Sin Ang, S Karbasizadeh, I Abdolhosseini Sarsari, Mitra Ghergherehchi
Two-dimensional Dirac half-metal in porous carbon nitride C6N7monolayer via atomic doping. Nanotechnology 33 (7) (2021)
Thi-Nga Do, Nguyen N Hieu, N A Poklonski, Nguyen Thi Thanh Binh, Cuong Q Nguyen, Nguyen D Hien
Computational insights into structural, electronic, and optical properties of Janus GeSO monolayer. RSC advances 11 (45) (2021)
Tuan V Vu, Huynh V Phuc, Sohail Ahmad, Vo Quang Nha, Chu Van Lanh, Dibya Prakash Rai, A I Kartamyshev, Khang D Pham, Le Cong Nhan, Nguyen N Hieu
Outstanding elastic, electronic, transport and optical properties of a novel layered material C 4 F 2 : first-principles study. RSC advances 11 (38) (2021)
Tuan V Vu, Vo T T Vi, Huynh V Phuc, Chuong V Nguyen, N A Poklonski, Carlos A Duque, Dibya Prakash Rai, Bui Dinh Hoi, Nguyen N Hieu
Electronic, optical, and thermoelectric properties of Janus In-based monochalcogenides. Journal of physics. Condensed matter : an Institute of Physics journal 33 (22) (2021)
Nguyen N Hieu, Po-Hsin Shih, Thi-Nga Do, Chuong V Nguyen
Multi-orbital tight binding model for the electronic and optical properties of armchair graphene nanoribbons in the presence of a periodic potential. Journal of physics. Condensed matter : an Institute of Physics journal (2021)
Thi-Nga Do, M Idrees, Nguyen T T Binh, Huynh V Phuc, Nguyen N Hieu, Le T Hoa, Bin Amin, Hieu Van
Type-I band alignment of BX-ZnO (X = As, P) van der Waals heterostructures as high-efficiency water splitting photocatalysts: a first-principles study. RSC advances 10 (72) (2020)
Thi-Nga Do, M Idrees, Bin Amin, Nguyen N Hieu, Huynh V Phuc, Nguyen V Hieu, Le T Hoa, Chuong V Nguyen
Electronic and photocatalytic properties of two-dimensional boron phosphide/SiC van der Waals heterostructure with direct type-II band alignment: a first principles study. RSC advances 10 (53) (2020)
Tuan V Vu, Khang D Pham, Tri Nhut Pham, Dat D Vo, Phuc Toan Dang, Chuong V Nguyen, Huynh V Phuc, Nguyen T T Binh, D M Hoat, Nguyen N Hieu
First-principles prediction of chemically functionalized InN monolayers: electronic and optical properties. RSC advances 10 (18) (2020)
Dat D Vo, Tuan V Vu, Thi H Tham Nguyen, Nguyen N Hieu, Huynh V Phuc, Nguyen T T Binh, M Idrees, Bin Amin, Chuong V Nguyen
Effects of electric field and strain engineering on the electronic properties, band alignment and enhanced optical properties of ZnO/Janus ZrSSe heterostructures. RSC advances 10 (17) (2020)
Do Minh Hoat, Vo Van On, Duy Khanh Nguyen, Mosayeb Naseri, R Ponce-Pérez, Tuan V Vu, J F Rivas-Silva, Nguyen N Hieu, Gregorio H Cocoletzi
Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study. RSC advances 10 (66) (2020)
Hong T T Nguyen, Tuan V Vu, Van Thinh Pham, Nguyen N Hieu, Huynh V Phuc, Bui D Hoi, Nguyen T T Binh, M Idrees, Bin Amin, Chuong V Nguyen
Computational insights into structural, electronic and optical characteristics of GeC/C 2 N van der Waals heterostructures: effects of strain engineering and electric field. RSC advances 10 (5) (2020)
Pham T Huong, M Idrees, Bin Amin, Nguyen N Hieu, Huynh V Phuc, Le T Hoa, Chuong V Nguyen
Electronic structure, optoelectronic properties and enhanced photocatalytic response of GaN-GeC van der Waals heterostructures: a first principles study. RSC advances 10 (40) (2020)
Tuan V Vu, Hien D Tong, Duy Phu Tran, Nguyen T T Binh, Chuong V Nguyen, Huynh V Phuc, Hoat M Do, Nguyen N Hieu
Electronic and optical properties of Janus ZrSSe by density functional theory. RSC advances 9 (70) (2019)
Bui D Hoi, Le Thi Thu Phuong, Vo T Lam, Doan Q Khoa, Tran Tien, Nguyen T T Binh, Huynh V Phuc, Nguyen N Hieu, Chuong V Nguyen
Schottky anomaly and Néel temperature treatment of possible perturbed hydrogenated AA-stacked graphene, SiC, and h-BN bilayers. RSC advances 9 (71) (2019)