Geonwook Yoo

Publication Activity (10 Years)

Years Active: 2021-2024
Publications (10 Years): 8

Top Topics

Room Temperature

Transcranial Magnetic Stimulation

Top Venues

Science advances

Nanomaterials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo
A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact. Micromachines 15 (1) (2024)
Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo
A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact. Micromachines 15 (1) (2024)
Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo
A 2.8 kV Breakdown Voltage α-Ga 2 O 3 MOSFET with Hybrid Schottky Drain Contact. Micromachines 15 (1) (2024)
Jeong Yong Yang, Minseong Park, Min Jae Yeom, Yongmin Baek, Seok Chan Yoon, Yeong Je Jeong, Seung Yoon Oh, Kyusang Lee, Geonwook Yoo
Reconfigurable Physical Reservoir in GaN/α-In 2 Se 3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer. ACS nano (2023)
Minseong Park, Jeong Yong Yang, Min Jae Yeom, Byungjoon Bae, Yongmin Baek, Geonwook Yoo, Kyusang Lee
An artificial neuromuscular junction for enhanced reflexes and oculomotor dynamics based on a ferroelectric CuInP 2 S 6 /GaN HEMT. Science advances 9 (38) (2023)
Aujin Hwang, Minseong Park, Youngseo Park, Yeongseok Shim, Sukhyeong Youn, Chan-Ho Lee, Han Beom Jeong, Hu Young Jeong, Jiwon Chang, Kyusang Lee, Geonwook Yoo, Junseok Heo
Visible and infrared dual-band imaging via Ge/MoS 2 van der Waals heterostructure. Science advances 7 (51) (2021)
Min Jae Yeom, Jeong Yong Yang, Chan Ho Lee, Junseok Heo, Roy Byung Kyu Chung, Geonwook Yoo
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric. Micromachines 12 (12) (2021)
Youngseo Park, Jiyeon Ma, Geonwook Yoo, Junseok Heo
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors. Nanomaterials (Basel, Switzerland) 11 (2) (2021)