Junseok Heo

Publication Activity (10 Years)

Years Active: 2021-2023
Publications (10 Years): 7

Top Topics

Transition Metal

Room Temperature

Perovskite Solar Cells

Top Venues

Science advances

Nature communications

Nanomaterials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Jong-Woon Ha, Ah Young Lee, Hyeong Ju Eun, Jae-Hyun Kim, Hyungju Ahn, Sungjun Park, Changjin Lee, Deok Won Seo, Junseok Heo, Sung Cheol Yoon, Seo-Jin Ko, Jong H Kim
High Detectivity Near Infrared Organic Photodetectors Using an Asymmetric Non-Fullerene Acceptor for Optimal Nanomorphology and Suppressed Dark Current. ACS nano (2023)
Doeon Lee, Minseong Park, Yongmin Baek, Byungjoon Bae, Junseok Heo, Kyusang Lee
In-sensor image memorization and encoding via optical neurons for bio-stimulus domain reduction toward visual cognitive processing. Nature communications 13 (1) (2022)
Da Bin Kim, Ju Han, Ye Seul Jung, Kwan Sik Park, Youngseo Park, Junseok Heo, Yong Soo Cho
Origin of the anisotropic-strain-driven photoresponse enhancement in inorganic halide-based self-powered flexible photodetectors. Materials horizons 9 (4) (2022)
Hyeong Ju Eun, Hyojin Kye, Dahee Kim, In Su Jin, Jae Woong Jung, Seo-Jin Ko, Junseok Heo, Bong-Gi Kim, Jong H Kim
Effective Dark Current Suppression for High-Detectivity Organic Near-Infrared Photodetectors Using a Non-Fullerene Acceptor. ACS applied materials & interfaces 13 (9) (2021)
Aujin Hwang, Minseong Park, Youngseo Park, Yeongseok Shim, Sukhyeong Youn, Chan-Ho Lee, Han Beom Jeong, Hu Young Jeong, Jiwon Chang, Kyusang Lee, Geonwook Yoo, Junseok Heo
Visible and infrared dual-band imaging via Ge/MoS 2 van der Waals heterostructure. Science advances 7 (51) (2021)
Min Jae Yeom, Jeong Yong Yang, Chan Ho Lee, Junseok Heo, Roy Byung Kyu Chung, Geonwook Yoo
Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO 2 Gate Dielectric. Micromachines 12 (12) (2021)
Youngseo Park, Jiyeon Ma, Geonwook Yoo, Junseok Heo
Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in β-Ga2O3 Field-Effect Transistors. Nanomaterials (Basel, Switzerland) 11 (2) (2021)