Hyun-Yong Yu

ORCID

Publication Activity (10 Years)

Years Active: 2016-2023
Publications (10 Years): 19

Top Venues

ACS applied materials & interfaces

Small (Weinheim an der Bergstrasse, Germany)

ACS nano

Advanced science (Weinheim, Baden-Wurttemberg, Germany)

Korea University

Stanford University (PHD)

This page only lists publications with an associated author ORCID identifier.

Affiliation History

Korea University Mar 01 2012

South Korea

Professor :: Electrical Engineering

Education History

Stanford University Sep 01 2004 - Aug 31 2009

United States

PHD :: Electrical Engineering

Publications

Jong-Hyun Kim, Seung-Geun Kim, Seung-Hwan Kim, Kyu-Hyun Han, Jiyoung Kim, Hyun-Yong Yu
Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide. ACS applied materials & interfaces (2023)
Dong-Gyu Jin, Hyun-Yong Yu
First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing. Small (Weinheim an der Bergstrasse, Germany) (2023)
Dong-Gyu Jin, Hyun-Yong Yu
First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing. Small (Weinheim an der Bergstrasse, Germany) 20 (19) (2023)
Dong-Gyu Jin, Hyun-Yong Yu
First Demonstration of Yttria-Stabilized Hafnia-Based Long-Retention Solid-State Electrolyte-Gated Transistor for Human-Like Neuromorphic Computing. Small (Weinheim an der Bergstrasse, Germany) 20 (19) (2023)
Sungjoo Song, Seung-Hwan Kim, Kyu-Hyun Han, Hyung-Jun Kim, Hyun-Yong Yu
In-Depth Analysis on Self Alignment Effect of the Fermi-Level Using Graphene on Both n- and p-Type Semiconductors. ACS applied materials & interfaces (2023)
Dong-Gyu Jin, Seung-Hwan Kim, Seung-Geun Kim, June Park, Euyjin Park, Hyun-Yong Yu
Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton-Electron Coupling Effect in a Solid-State Electrolyte-Gated Transistor. Small (Weinheim an der Bergstrasse, Germany) 17 (30) (2021)
Seung-Geun Kim, Seung-Hwan Kim, Gwang-Sik Kim, Hyeok Jeon, Taehyun Kim, Hyun-Yong Yu
Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors. Advanced science (Weinheim, Baden-Wurttemberg, Germany) 8 (12) (2021)
Hyeok Jeon, Seung-Geun Kim, June Park, Seung-Hwan Kim, Euyjin Park, Jiyoung Kim, Hyun-Yong Yu
Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks. Small (Weinheim an der Bergstrasse, Germany) 16 (49) (2020)
June Park, Euyjin Park, Sungho Kim, Hyun-Yong Yu
Nitrogen-Induced Enhancement of Synaptic Weight Reliability in Titanium Oxide-Based Resistive Artificial Synapse and Demonstration of the Reliability Effect on the Neuromorphic System. ACS applied materials & interfaces 11 (35) (2019)
Seung-Geun Kim, Seung-Hwan Kim, June Park, Gwang-Sik Kim, Jae-Hyeun Park, Krishna C Saraswat, Jiyoung Kim, Hyun-Yong Yu
Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse. ACS nano 13 (9) (2019)
Seung-Hwan Kim, Kyu Hyun Han, Euyjin Park, Seung-Geun Kim, Hyun-Yong Yu
Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact. ACS applied materials & interfaces 11 (37) (2019)
Seung-Hwan Kim, Kyu Hyun Han, Gwang-Sik Kim, Seung-Geun Kim, Jiyoung Kim, Hyun-Yong Yu
Schottky Barrier Height Modulation Using Interface Characteristics of MoS2 Interlayer for Contact Structure. ACS applied materials & interfaces 11 (6) (2019)
Kyu Hyun Han, Gwang-Sik Kim, June Park, Seung-Geun Kim, Jin-Hong Park, Hyun-Yong Yu
Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior. ACS applied materials & interfaces 11 (23) (2019)
Jae-Hyeun Park, Seung-Hwan Kim, Seung-Geun Kim, Keun Heo, Hyun-Yong Yu
Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits. ACS applied materials & interfaces 11 (9) (2019)
Gwang-Sik Kim, Seung-Hwan Kim, June Park, Kyu Hyun Han, Jiyoung Kim, Hyun-Yong Yu
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2 Transistors with Reduction of Metal-Induced Gap States. ACS nano 12 (6) (2018)
Seung-Hwan Kim, Gwang-Sik Kim, June Park, Changmin Lee, Hyoungsub Kim, Jiyoung Kim, Joon Hyung Shim, Hyun-Yong Yu
Novel Conductive Filament Metal-Interlayer-Semiconductor Contact Structure for Ultralow Contact Resistance Achievement. ACS applied materials & interfaces 10 (31) (2018)
Gwang-Sik Kim, Seung-Hwan Kim, Tae In Lee, Byung Jin Cho, Changhwan Choi, Changhwan Shin, Joon Hyung Shim, Jiyoung Kim, Hyun-Yong Yu
Fermi-Level Unpinning Technique with Excellent Thermal Stability for n-Type Germanium. ACS applied materials & interfaces 9 (41) (2017)
Sun-Woo Kim, Seung-Hwan Kim, Gwang-Sik Kim, Changhwan Choi, Rino Choi, Hyun-Yong Yu
The Effect of Interfacial Dipoles on the Metal-Double Interlayers-Semiconductor Structure and Their Application in Contact Resistivity Reduction. ACS applied materials & interfaces 8 (51) (2016)
Gwang-Sik Kim, Sun-Woo Kim, Seung-Hwan Kim, June Park, Yujin Seo, Byung Jin Cho, Changhwan Shin, Joon Hyung Shim, Hyun-Yong Yu
Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack. ACS applied materials & interfaces 8 (51) (2016)

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Publication Activity (10 Years)

Top Topics

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Hyun-Yong Yu