Hyungtak Kim

ResearcherID Scopus Author ID ORCID

Publication Activity (10 Years)

Years Active: 2019-2023
Publications (10 Years): 7

Top Topics

High Temperature

Molecularly Imprinted

Metal Organic Framework

Gold Nanoparticles

Top Venues

Sensors (Basel, Switzerland)

Materials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Van Cuong Nguyen, Ho-Young Cha, Hyungtak Kim
High Selectivity Hydrogen Gas Sensor Based on WO 3 /Pd-AlGaN/GaN HEMTs. Sensors (Basel, Switzerland) 23 (7) (2023)
Myeongsu Chae, Hyungtak Kim
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors. Micromachines 14 (5) (2023)
Chan-Hee Jang, Hyun-Seop Kim, Hyungtak Kim, Ho-Young Cha
Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO 2 Films. Materials (Basel, Switzerland) 15 (6) (2022)
Tuan-Anh Vuong, Ho-Young Cha, Hyungtak Kim
Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature. Micromachines 12 (5) (2021)
Van Cuong Nguyen, Kwangeun Kim, Hyungtak Kim
Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation. Micromachines 12 (4) (2021)
June-Heang Choi, Hyungtak Kim, Hyuk-Kee Sung, Ho-Young Cha
Investigation of Stability and Power Consumption of an AlGaN/GaN Heterostructure Hydrogen Gas Sensor Using Different Bias Conditions. Sensors (Basel, Switzerland) 19 (24) (2019)
Dongmin Keum, Hyungtak Kim
Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors. Micromachines 10 (11) (2019)