Oliver Brandt (O Brandt)

ResearcherID Scopus Author ID ORCID

Publication Activity (10 Years)

Years Active: 2019-2024
Publications (10 Years): 21

Top Topics

Reduced Graphene Oxide

Obstructive Sleep Apnea

Room Temperature

Molecular Dynamics

Top Venues

Nanoscale advances

ACS applied materials & interfaces

This page only lists publications with an associated author ORCID identifier.

Publications

Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters (2024)
Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters 24 (21) (2024)
Mikel Gómez Ruiz, Aron Castro, Jesus Herranz, Alessandra da Silva, Philipp Maximilian John, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Jonas Lähnemann
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy. Nanotechnology (2024)
Jingxuan Kang, Rose-Mary Jose, Miriam Oliva, Thomas Auzelle, Mikel Gómez Ruiz, Abbes Tahraoui, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles. Nanotechnology 35 (37) (2024)
Jingxuan Kang, Rose-Mary Jose, Miriam Oliva, Thomas Auzelle, Mikel Gómez Ruiz, Abbes Tahraoui, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar
Uniform large-area surface patterning achieved by metal dewetting for the top-down fabrication of GaN nanowire ensembles. Nanotechnology (2024)
Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters 24 (21) (2024)
Mikel Gómez Ruiz, A Castro, J Herranz, A da Silva, Philipp Maximilian John, A Trampert, Oliver Brandt, L Geelhaar, J Lähnemann
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy. Nanotechnology 35 (26) (2024)
Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters 24 (21) (2024)
Miriam Oliva, Vladimir M Kaganer, M Pudelski, S Meister, A Tahraoui, L Geelhaar, Oliver Brandt, Thomas Auzelle
A route for the top-down fabrication of ordered ultrathin GaN nanowires. Nanotechnology 34 (20) (2023)
Vladimir M Kaganer, Oleg V Konovalov, Gabriele Calabrese, David van Treeck, Albert Kwasniewski, Carsten Richter, Sergio Fernández-Garrido, Oliver Brandt
X-ray scattering study of GaN nanowires grown on Ti/Al 2 O 3 by molecular beam epitaxy. Journal of applied crystallography 56 (Pt 2) (2023)
Philipp Maximilian John, Mikel Gómez Ruiz, Len van Deurzen, Jonas Lähnemann, Achim Trampert, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires. Nanotechnology (2023)
Thomas Auzelle, Miriam Oliva, Philipp John, Manfred Ramsteiner, Achim Trampert, Lutz Geelhaar, Oliver Brandt
Density control of GaN nanowires at the wafer scale using self-assembled SiN x patches on sputtered TiN(111). Nanotechnology (2023)
David van Treeck, Jonas Lähnemann, Oliver Brandt, Lutz Geelhaar
Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range. Nanotechnology (2023)
Miriam Oliva, Vladimir M Kaganer, Maximilian Pudelski, Sebastian Meister, Abbes Tahraoui, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
A route for the top-down fabrication of ordered ultrathin GaN nanowires. Nanotechnology (2023)
Roman L Volkov, Nikolay I Borgardt, Oleg V Konovalov, Sergio Fernández-Garrido, Oliver Brandt, Vladimir M Kaganer
Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111). Nanoscale advances 4 (2) (2021)
Thomas Auzelle, Florian Ullrich, Sebastian Hietzschold, Chiara Sinito, Stefan Brackmann, Wolfgang Kowalsky, Eric Mankel, Oliver Brandt, Robert Lovrincic, Sergio Fernández-Garrido
External Control of GaN Band Bending Using Phosphonate Self-Assembled Monolayers. ACS applied materials & interfaces 13 (3) (2021)
Hanno Küpers, Ryan B Lewis, Pierre Corfdir, Michael Niehle, Timur Flissikowski, Holger T Grahn, Achim Trampert, Oliver Brandt, Lutz Geelhaar
Drastic Effect of Sequential Deposition Resulting from Flux Directionality on the Luminescence Efficiency of Nanowire Shells. ACS applied materials & interfaces 13 (42) (2021)
Oliver Brandt, Lutz Geelhaar, Maria Tchernycheva
Corrigendum: Optical properties of GaN nanowires grown on chemical vapor deposited-graphene (2019 Nanotechnology 30 214005). Nanotechnology (2020)
Chiara Sinito, P Corfdir, C Pfüller, G Gao, Javier Bartolomé, Sebastian Koelling, A Rodil Doblado, U Jahn, Jonas Lähnemann, T Auzelle, J K Zettler, T Flissikowski, P Koenraad, H T Grahn, L Geelhaar, Sergio Fernández-Garrido, Oliver Brandt
Correction to Absence of Quantum-Confined Stark Effect in GaN Quantum Disks Embedded in (Al,Ga)N Nanowires Grown by Molecular Beam Epitaxy. Nano letters 20 (9) (2020)
David van Treeck, Johannes Ledig, Gregor Scholz, Jonas Lähnemann, Mattia Musolino, Abbes Tahraoui, Oliver Brandt, Andreas Waag, Henning Riechert, Lutz Geelhaar
Electroluminescence and current-voltage measurements of single-(In,Ga)N/GaN-nanowire light-emitting diodes in a nanowire ensemble. Beilstein journal of nanotechnology 10 (2019)
Sergio Fernández-Garrido, Thomas Auzelle, Jonas Lähnemann, Kilian Wimmer, Abbes Tahraoui, Oliver Brandt
Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation. Nanoscale advances 1 (5) (2019)