Philipp Maximilian John (Philipp John, P John)

Publication Activity (10 Years)

Years Active: 2023-2024
Publications (10 Years): 7

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This page only lists publications with an associated author ORCID identifier.

Publications

Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters (2024)
Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters 24 (21) (2024)
Mikel Gómez Ruiz, Aron Castro, Jesus Herranz, Alessandra da Silva, Philipp Maximilian John, Achim Trampert, Oliver Brandt, Lutz Geelhaar, Jonas Lähnemann
Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy. Nanotechnology (2024)
Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters 24 (21) (2024)
Mikel Gómez Ruiz, A Castro, J Herranz, A da Silva, Philipp Maximilian John, A Trampert, Oliver Brandt, L Geelhaar, J Lähnemann
Composition and optical properties of (In, Ga)As nanowires grown by group-III-assisted molecular beam epitaxy. Nanotechnology 35 (26) (2024)
Philipp Maximilian John, Achim Trampert, Duc Van Dinh, Domenik Spallek, Jonas Lähnemann, Vladimir M Kaganer, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
ScN/GaN(11̅00): A New Platform for the Epitaxy of Twin-Free Metal-Semiconductor Heterostructures. Nano letters 24 (21) (2024)
Philipp Maximilian John, Mikel Gómez Ruiz, Len van Deurzen, Jonas Lähnemann, Achim Trampert, Lutz Geelhaar, Oliver Brandt, Thomas Auzelle
Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires. Nanotechnology (2023)