Sungjun Kim

ResearcherID ORCID

Publication Activity (10 Years)

Years Active: 2017-2023
Publications (10 Years): 16

Top Venues

Nanoscale

Physical chemistry chemical physics : PCCP

ACS applied materials & interfaces

Nanoscale research letters

Dongguk University

This page only lists publications with an associated author ORCID identifier.

Affiliation History

Dongguk University Mar 1o 2020

South Korea

Assistant professor :: Division of Electronics and Electrical Engineering

Publications

Dahye Kim, Jihyung Kim, Seokyeon Yun, Jungwoo Lee, Euncho Seo, Sungjun Kim
Ferroelectric synaptic devices based on CMOS-compatible HfAlO x for neuromorphic and reservoir computing applications. Nanoscale (2023)
Seyeong Yang, Taegyun Kim, Sunghun Kim, Daewon Chung, Tae-Hyeon Kim, Jung Kyu Lee, Sungjoon Kim, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim, Seongjae Cho
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems. Nanoscale (2023)
Dahye Kim, Jihyung Kim, Seokyeon Yun, Jungwoo Lee, Euncho Seo, Sungjun Kim
Ferroelectric synaptic devices based on CMOS-compatible HfAlO x for neuromorphic and reservoir computing applications. Nanoscale (2023)
Jihyung Kim, Osung Kwon, Eunjin Lim, Dahye Kim, Sungjun Kim
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO x tunnel junction memory. Physical chemistry chemical physics : PCCP 25 (6) (2023)
Dahye Kim, Jihyung Kim, Seokyeon Yun, Jungwoo Lee, Euncho Seo, Sungjun Kim
Ferroelectric synaptic devices based on CMOS-compatible HfAlO x for neuromorphic and reservoir computing applications. Nanoscale 15 (18) (2023)
Jihyung Kim, Osung Kwon, Eunjin Lim, Dahye Kim, Sungjun Kim
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO x tunnel junction memory. Physical chemistry chemical physics : PCCP (2023)
Dahye Kim, Jihyung Kim, Seokyeon Yun, Jungwoo Lee, Euncho Seo, Sungjun Kim
Ferroelectric synaptic devices based on CMOS-compatible HfAlO x for neuromorphic and reservoir computing applications. Nanoscale (2023)
Yeon-Joon Choi, Suhyun Bang, Tae-Hyeon Kim, Kyungho Hong, Sungjoon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach. Physical chemistry chemical physics : PCCP (2021)
Jinwoong Yang, Hyojong Cho, Hojeong Ryu, Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing. ACS applied materials & interfaces 13 (28) (2021)
Sobia Ali Khan, Sungjun Kim
Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO 2 -based resistive switching memory for neuromorphic applications. RSC advances 10 (52) (2020)
Jinju Lee, Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Chandreswar Mahata, Eunjin Sim, Muhammad Ismail, Yawar Abbas, Haider Abbas, Dong Keun Lee, Min-Hwi Kim, Yoon Kim, Changhwan Choi, Byung-Gook Park, Sungjun Kim
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering. ACS applied materials & interfaces 12 (30) (2020)
Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Ying-Chen Chen, Yao-Feng Chang, Kyung-Chang Ryoo, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate. Small (Weinheim an der Bergstrasse, Germany) 14 (19) (2018)
Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park
Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory. Nanoscale research letters 13 (1) (2018)
Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park
Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device. Physical chemistry chemical physics : PCCP 19 (29) (2018)
Muhammad Ismail, Ijaz Talib, Anwar Manzoor Rana, Tahira Akbar, Shazia Jabeen, Jinju Lee, Sungjun Kim
Effect of Bilayer CeO2-x/ZnO and ZnO/CeO2-x Heterostructures and Electroforming Polarity on Switching Properties of Non-volatile Memory. Nanoscale research letters 13 (1) (2018)
Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, Byung-Gook Park
Analog Synaptic Behavior of a Silicon Nitride Memristor. ACS applied materials & interfaces 9 (46) (2017)

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Publication Activity (10 Years)

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Sungjun Kim