Yann Beilliard

Publication Activity (10 Years)

Years Active: 2020-2024
Publications (10 Years): 4

Top Topics

Reduced Graphene Oxide

Top Venues

This page only lists publications with an associated author ORCID identifier.

Publications

Dorian Coffineau, Nicolas Gariépy, Benoit Manchon, Raphaël Dawant, Abdelatif Jaouad, Étienne Grondin, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Andreas Ruediger, Dominique Drouin
CMOS-compatible Hf 0.5 Zr 0.5 O 2 -based ferroelectric memory crosspoints fabricated with damascene process. Nanotechnology (2024)
Dorian Coffineau, Nicolas Gariépy, Benoit Manchon, Raphaël Dawant, Abdelatif Jaouad, Etienne Grondin, Serge Ecoffey, Fabien Alibart, Yann Beilliard, Andreas Ruediger, Dominique Drouin
CMOS-compatible Hf 0.5 Zr 0.5 O 2 -based ferroelectric memory crosspoints fabricated with damascene process. Nanotechnology 35 (42) (2024)
João H Quintino Palhares, Yann Beilliard, Fabien Alibart, Everton Bonturim, Daniel Zanetti de Florio, Fabio Coral Fonseca, Dominique Drouin, Andre Santarosa Ferlauto
Oxygen vacancy engineering of TaOx-based resistive memories by Zr doping for improved variability and synaptic behavior. Nanotechnology 32 (40) (2021)
Yann Beilliard, François Paquette, Frédéric Brousseau, Serge Ecoffey, Fabien Alibart, Dominique Drouin
Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories (2020 Nanotechnology 31 445205). Nanotechnology 31 (49) (2020)