Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories (2020 Nanotechnology 31 445205).
Yann BeilliardFrançois PaquetteFrédéric BrousseauSerge EcoffeyFabien AlibartDominique DrouinPublished in: Nanotechnology (2020)