Flexible Sol-Gel-Processed Y 2 O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process.

Flexible indium tin oxide (ITO)/Y 2 O 3 /Ag resistive random access memory (RRAM) devices were successfully fabricated using a thermal-energy-free ultraviolet (UV)/ozone-assisted photochemical annealing process. Using the UV/ozone-assisted photochemical process, the organic residue can be eliminated, and thinner and smother Y 2 O 3 films than those formed using other methods can be fabricated. The flexible UV/ozone-assisted photochemical annealing process-based ITO/Y 2 O 3 /Ag RRAM devices exhibited the properties of conventional bipolar RRAM without any forming process. Furthermore, the pure and amorphous-phase Y 2 O 3 films formed via this process showed a decreased leakage current and an increased high-resistance status (HRS) compared with the films formed using other methods. Therefore, RRAM devices can be realized on plastic substrates using a thermal-energy-free UV/ozone-assisted photochemical annealing process. The fabricated devices exhibited a resistive window (ratio of HRS/low-resistance status (LRS)) of >10 4 , with the HRS and LRS values remaining almost the same (i.e., limited deterioration occurred) for 10 4 s and up to 10 2 programming/erasing operation cycles.