In-Man Kang (In Man Kang)

Publication Activity (10 Years)

Years Active: 2022-2024
Publications (10 Years): 22

Top Topics

Highly Efficient

Carbon Nanotubes

Room Temperature

Top Venues

Nanomaterials (Basel, Switzerland)

Materials (Basel, Switzerland)

This page only lists publications with an associated author ORCID identifier.

Publications

Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jae-Won Jang
UV/Ozone-Treated and Sol-Gel-Processed Y 2 O 3 Insulators Prepared Using Gelation-Delaying Precursors. Nanomaterials (Basel, Switzerland) 14 (9) (2024)
Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jae-Won Jang, In-Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials (Basel, Switzerland) 14 (5) (2024)
Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jae-Won Jang, In-Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials (Basel, Switzerland) 14 (5) (2024)
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jae-Won Jang
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y 2 O 3 Random-Access Memory. Nanomaterials (Basel, Switzerland) 14 (6) (2024)
Sang Ho Lee, Jin Park, Young Jun Yoon, In-Man Kang
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing. Nanomaterials (Basel, Switzerland) 14 (2) (2024)
Sang Ho Lee, Jin Park, Young Jun Yoon, In-Man Kang
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing. Nanomaterials (Basel, Switzerland) 14 (2) (2024)
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jae-Won Jang
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y 2 O 3 Random-Access Memory. Nanomaterials (Basel, Switzerland) 14 (6) (2024)
Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jae-Won Jang
UV/Ozone-Treated and Sol-Gel-Processed Y 2 O 3 Insulators Prepared Using Gelation-Delaying Precursors. Nanomaterials (Basel, Switzerland) 14 (9) (2024)
Jeong-Hyeon Na, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jae-Won Jang, In-Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials (Basel, Switzerland) 14 (5) (2024)
Yoonjin Cho, Sangwoo Lee, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jae-Won Jang
Effect of Electrochemically Active Top Electrode Materials on Nanoionic Conductive Bridge Y 2 O 3 Random-Access Memory. Nanomaterials (Basel, Switzerland) 14 (6) (2024)
Sang Ho Lee, Jin Park, Young Jun Yoon, In-Man Kang
Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing. Nanomaterials (Basel, Switzerland) 14 (2) (2024)
Sangwoo Lee, Yoonjin Cho, Seongwon Heo, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, Jae-Won Jang
UV/Ozone-Treated and Sol-Gel-Processed Y 2 O 3 Insulators Prepared Using Gelation-Delaying Precursors. Nanomaterials (Basel, Switzerland) 14 (9) (2024)
Taehun Lee, Hae-In Kim, Yoonjin Cho, Sangwoo Lee, Won-Yong Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Sin-Hyung Lee, Jae-Won Jang
Sol-Gel-Processed Y 2 O 3 Multilevel Resistive Random-Access Memory Cells for Neural Networks. Nanomaterials (Basel, Switzerland) 13 (17) (2023)
Won Park, Jun-Hyeong Park, Jun-Su Eun, Jinuk Lee, Jeong-Hyeon Na, Sin-Hyung Lee, Jae-Won Jang, In-Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing. Nanomaterials (Basel, Switzerland) 13 (15) (2023)
Junhao Feng, Sang-Hwa Jeon, Jaehoon Park, Sin-Hyung Lee, Jae-Won Jang, In-Man Kang, Do-Kyung Kim, Jin-Hyuk Bae
Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment. Nanomaterials (Basel, Switzerland) 13 (11) (2023)
Jin Park, Sang Ho Lee, Ga-Eon Kang, Jun-Hyeok Heo, So-Ra Jeon, Min-Seok Kim, Seung-Ji Bae, Jeong-Woo Hong, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries. Nanomaterials (Basel, Switzerland) 13 (13) (2023)
Hyeon-Joong Kim, Do-Won Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jae-Won Jang
Flexible Sol-Gel-Processed Y 2 O 3 RRAM Devices Obtained via UV/Ozone-Assisted Photochemical Annealing Process. Materials (Basel, Switzerland) 15 (5) (2022)
Yu-Jin Hwang, Do-Kyung Kim, Sang-Hwa Jeon, Ziyuan Wang, Jaehoon Park, Sin-Hyung Lee, Jae-Won Jang, In-Man Kang, Jin-Hyuk Bae
Importance of Structural Relaxation on the Electrical Characteristics and Bias Stability of Solution-Processed ZnSnO Thin-Film Transistors. Nanomaterials (Basel, Switzerland) 12 (18) (2022)
Do-Won Kim, Hyeon-Joong Kim, Won-Yong Lee, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jae-Won Jang
Enhanced Switching Reliability of Sol-Gel-Processed Y 2 O 3 RRAM Devices Based on Y 2 O 3 Surface Roughness-Induced Local Electric Field. Materials (Basel, Switzerland) 15 (5) (2022)
So-Ra Min, Min-Su Cho, Sang Ho Lee, Jin Park, Hee-Dae An, Geon-Uk Kim, Young Jun Yoon, Jae-Hwa Seo, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO 2 /Si 3 N 4 Dual-Layer Insulator. Materials (Basel, Switzerland) 15 (3) (2022)
Hee Dae An, Sang Ho Lee, Jin Park, So Ra Min, Geon Uk Kim, Young Jun Yoon, Jae Hwa Seo, Min Su Cho, Jae-Won Jang, Jin-Hyuk Bae, Sin-Hyung Lee, In-Man Kang
Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure. Nanomaterials (Basel, Switzerland) 12 (19) (2022)
Hae-In Kim, Taehun Lee, Won-Yong Lee, Kyoungdu Kim, Jin-Hyuk Bae, In-Man Kang, Sin-Hyung Lee, Kwangeun Kim, Jae-Won Jang
Improved Environment Stability of Y 2 O 3 RRAM Devices with Au Passivated Ag Top Electrodes. Materials (Basel, Switzerland) 15 (19) (2022)