A new broadband near-infrared emitting Mg 2 Al 4 Si 5 O 18 :Cr 3+ phosphor for night-vision imaging.

Phosphor-converted light-emitting diodes (pc-LEDs) have important applications in security surveillance and food testing. However, developing new broadband near-infrared phosphors remains an important issue. Herein, the high-temperature solid-state reaction method was applied to synthesize a new type of Cr 3+ doped Mg 2 Al 4 Si 5 O 18 broadband NIR phosphor which matches a blue LED chip. It exhibits a broadband near-infrared (NIR) phosphor emission with a focus of 856 nm and a full width at half maximum >200 nm after excitation at 453 nm. The optimum concentration of Cr 3+ was established to contain 2 mol%. At 398 K, the luminescence intensity is 45.2% of that at 298 K. The power output of NIR pc-LEDs fabricated by incorporating a 450 nm chip and the Mg 2 Al 4 Si 5 O 18 :0.02 Cr 3+ phosphor is 19.69 mW at 300 mA current. Finally, the developed NIR pc-LED shows significant potential for use in night-vision imaging.