Oxygen scavenging of HfZrO 2 -based capacitors for improving ferroelectric properties.

HfO 2 -based ferroelectric (FE) materials have emerged as a promising material for non-volatile memory applications because of remanent polarization, scalability of thickness below 10 nm, and compatibility with complementary metal-oxide-semiconductor technology. However, in the metal/FE/insulator/semiconductor, it is difficult to improve switching voltage ( V sw ), endurance, and retention properties due to the interfacial layer (IL), which inevitably grows during the fabrication. Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrO x -based capacitor and the thinner IL was confirmed by cross-sectional transmission electron microscopy. V sw of a capacitor with scavenging decreased by 18% and the same P r could be obtained at a lower voltage than a capacitor without scavenging. In addition, excellent endurance properties up to 10 6 cycles were achieved. We believe oxygen scavenging has great potential for future HfZrO x -based memory device applications.