Login / Signup

Quasi-Zero-Dimensional Ferroelectric Polarization Charges-Coupled Resistance Switching with High-Current Density in Ultrascaled Semiconductors.

Qi SunXuefan ZhouXiaochi LiuYahua YuanLinfeng SunDing WangFei XueHang LuoDou ZhangJian Sun
Published in: Nano letters (2024)
Ferroelectric memristors hold immense promise for advanced memory and neuromorphic computing. However, they face limitations due to low readout current density in conventional designs with low-conductive ferroelectric channels, especially at the nanoscale. Here, we report a ferroelectric-mediated memristor utilizing a 2D MoS 2 nanoribbon channel with an ultrascaled cross-sectional area of <1000 nm 2 , defined by a ferroelectric BaTiO 3 nanoribbon stacked on top. Strikingly, the Schottky barrier at the MoS 2 contact can be effectively tuned by the charge transfers coupled with quasi-zero-dimensional polarization charges formed at the two ends of the nanoribbon, which results in distinctive resistance switching accompanied by multiple negative differential resistance showing the high-current density of >10 4 A/cm 2 . The associated space charges in BaTiO 3 are minimized to ∼3.7% of the polarization charges, preserving nonvolatile polarization. This achievement establishes ferroelectric-mediated nanoscale semiconductor memristors with high readout current density as promising candidates for memory and highly energy-efficient in-memory computing applications.
Keyphrases
  • working memory
  • cross sectional
  • room temperature
  • quantum dots
  • reduced graphene oxide
  • atomic force microscopy
  • photodynamic therapy
  • big data
  • transition metal