DFT exploration to tune the silyl group as anchoring unit on the performance of dye-sensitized solar cells: an approach to suppress dye leaching from semiconductor surface.

In this work, we report the lower stability of dyes containing cyanoacrylic acid anchoring group on semiconductor TiO 2 surface compared to the corresponding silyl unit in dye-sensitized solar cell. Density functional theory (DFT) calculations have been performed with simple donor (N,N diphenylamine) and π-conjugated spacers, with silyl anchoring groups to examine the efficiency of DSSCs. The calculated results in CAM-B3LYP/6-31G(d)/CPCM(THF) reveal that the cyanoacrylic acid anchoring group would have weaker coordination on semiconductor TiO 2 surface compared to the silyl anchoring group on the same surface. The designed dyes 1-7 exhibit comparable or in cases superior optical properties than that of the reference dye molecule with cyanoacrylic acid as an anchoring group. All designed dyes have lower ΔG rejection values implying efficient and faster electron recombination between the dye and electrolyte. The electron transition coefficient for these dyes is higher enough (~72-87%) suggesting successful electron propagation from dye to the semiconductor. The electron-donating methyl and ethyl groups show lower ΔG rejection values than the commonly studied -OEt substitution with the silyl anchoring group. The extended π conjugation for better electronic propagation and higher λ max values have been achieved with simple ethylene and butadiene units in the dye molecules. Dye 7 with butadiene as π-spacer unit shows superior oscillatory strength (f) of 2.19 and light-harvesting efficiency (LHE) of 0.99 than the other studied dyes and reference dye with carboxylic anchoring group (TA-ST-CA). The lowest ΔG rejection value (0.53 eV) of dye 7 suggests better electronic recombination than all the other dyes studied here. Transition Density matrix and PDOS calculations with the representative dye 7 suggest a good electronic propagation from the dye to the semiconductor. The incorporation of a highly π-conjugated spacer 4,8-di(thiophen-2-yl)-1H,5H-benzo[1,2-c:4,5-c']bis([1,2,5]thiadiazole) in dye 7 (7-BBT) showed remarkable enhancement in the absorption maxima ~800 nm corresponds to the UV-vis and NIR regions. The DFT calculated results shed light on designing new DSSCs with silyl anchoring groups for enhanced stability and superior efficiency.