Weak antilocalization in the topological semimetal candidate YbAuSb.

We report a study of the magnetic and magnetotransport properties of YbAuSb single crystals, which were grown using the bismuth flux. The x-ray diffraction data indicate that YbAuSb crystallizes in LiGaGe-type hexagonal structure with space group P 6 3 mc . Our magnetic measurements revealed that YbAuSb is nonmagnetic with a divalent state of ytterbium ion. The temperature-dependent electrical resistivity exhibits a metallic behavior. A cusp-like feature in transverse and longitudinal magnetoresistance is observed at the low field regime. This cusp-like feature is attributed to the weak antilocalization (WAL) effect, which is more prominent at low temperatures. The transverse magnetoconductivity in low-field region follows semiclassical model ~ √ B , which is consistent with the presence of WAL phenomena. The WAL effect in transverse and longitudinal magnetoconductance is well explained using the modified Hikami-Larkin-Nagaoka and generalized Altshuler-Aronov model, respectively. The Hall resistivity shows a linear field dependence with a positive slope, suggesting hole charge carriers dominate in electrical transport. The calculated carrier density and mobility are in the order of 10 20 cm -3 and 10 2 cm 2 V -1 s -1 , respectively.