Arsenic doping and diffusion in CdTe: a DFT study of bulk and grain boundaries.

The doping of CdTe with As is a method which is thought to increase cell efficiency by increasing electron hole concentrations. This doping relies on the diffusion of As through CdTe resulting in As Te substitution. The potential effectiveness of this is considered through kinetic and electronic properties calculations in both bulk and Σ3 and Σ9 grain boundaries using Density Functional Theory. In bulk zinc-blende CdTe, isolated As diffuses with barriers <0.5 eV and with similar barriers through wurtzite structured CdTe, generated by stacking faults, suggesting that As will not be trapped at the stacking faults and hence the transport of isolated As will be unhindered in bulk CdTe. Substitutional arsenic in bulk CdTe has little effect on the band gap except when it is positively charged in the AX-centre position or occurring as a di-interstitial. However in contrast to the case of chlorine, arsenic present in the grain boundaries introduces defect states into the band gap. This suggests that a doping strategy whereby the grain boundaries are first saturated with chlorine, before single arsenic atoms are introduced, might be more beneficial.