Enhanced Switching Reliability of Sol-Gel-Processed Y 2 O 3 RRAM Devices Based on Y 2 O 3 Surface Roughness-Induced Local Electric Field.

Sol-gel-processed Y 2 O 3 films were used as active channel layers for resistive random access memory (RRAM) devices. The fabricated ITO/Y 2 O 3 /Ag RRAM devices exhibited the properties of conventional bipolar memory devices. A triethylamine stabilizer with a high vapor pressure and low surface tension was added to realize the local electric field area. During drying and high-temperature post-annealing processes, the large convective flow enhanced the surface elevation, and the increased -OH groups accelerated the hydrolysis reaction and aggregation. These phenomena afforded Y 2 O 3 films with an uneven surface morphology and an increased surface roughness. The increased roughness of the Y 2 O 3 films attributable to the triethylamine stabilizer enhanced the local electrical field, improved device reliability, and achieved successful repetition of the switching properties over an extended period.