Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction.

Resistive switching induced by ion migration is promising for applications such as random-access memory (ReRAM) and neuromorphic transistors. Hydride ions (H - ) are an interesting candidate as the migration ion for resistive switching devices because they have fast diffusion in several compounds at room temperature and doping/dedoping can be used effectively to achieve significant changes in the electronic conductivity. Here, we report reversible resistive switching characteristics in rare-earth oxyhydrides ( RE H x O (3- x )/2 ) induced by field insertion/extraction of H - . The current-voltage measurements revealed that the resistive switching response, hysteresis, and switching voltage vary greatly with the H - /O 2- ratio in the films. We fabricated a ReRAM device using Ti/YH 1.3 O 0.85 /MoO x structure and confirmed the bipolar-type operation with the resistance switching ratio of 1 order of magnitude over 1000 cycles. The composition gradient of H - /O 2- in YH x O (3- x )/2 films, in addition to the hydrogen-absorbing ability of the top electrode, is essential for effective device operation. Our findings show that hydride-conducting solid-state electrolytes are suitable for resistive switching device development.