Junghwan Kim

Scopus Author ID Researcher Name Resolver ID ORCID

Publication Activity (10 Years)

Years Active: 2016-2024
Publications (10 Years): 21

Top Venues

ACS applied materials & interfaces

ACS nano

Journal of the American Chemical Society

Advanced materials (Deerfield Beach, Fla.)

Tokyo Institute of Technology

Tokyo Institute of Technology (MSC)

This page only lists publications with an associated author ORCID identifier.

Affiliation History

Tokyo Institute of Technology Apr 01 2016

Japan

Assistant Professor :: Materials Research Center for Element Strategy

Education History

Tokyo Institute of Technology Oct 01 2012 - Mar 31 2014

Japan

MSC

Ajou University Mar 01 2005 - Aug 31 2012

South Korea

BSC :: Electrical and Computer Engineering

Publications

Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, Hideo Hosono
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway. ACS nano 18 (13) (2024)
Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, Hideo Hosono
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway. ACS nano 18 (13) (2024)
Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, Hideo Hosono
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway. ACS nano 18 (13) (2024)
Yuhao Shi, Masatake Tsuji, Hanjun Cho, Shigenori Ueda, Junghwan Kim, Hideo Hosono
Approach to Low Contact Resistance Formation on Buried Interface in Oxide Thin-Film Transistors: Utilization of Palladium-Mediated Hydrogen Pathway. ACS nano (2024)
Hironobu Sugiyama, Nobuhiro Nakamura, Satoru Watanabe, Junghwan Kim, Masaaki Kitano, Hideo Hosono
Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-Based Catalysts. The journal of physical chemistry letters 14 (5) (2023)
Hironobu Sugiyama, Nobuhiro Nakamura, Satoru Watanabe, Junghwan Kim, Masaaki Kitano, Hideo Hosono
Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-Based Catalysts. The journal of physical chemistry letters (2023)
Dong-Gyu Kim, Hyuk Choi, Yoon-Seo Kim, Dong-Hyeon Lee, Hye-Jin Oh, Ju Hyeok Lee, Junghwan Kim, Seunghee Lee, Bongjin Kuh, Taewon Kim, Hyun You Kim, Jin-Seong Park
Selectively Nitrogen Doped ALD-IGZO TFTs with Extremely High Mobility and Reliability. ACS applied materials & interfaces (2023)
Masatake Tsuji, Masato Sasase, Soshi Iimura, Junghwan Kim, Hideo Hosono
Room-Temperature Solid-State Synthesis of Cs 3 Cu 2 I 5 Thin Films and Formation Mechanism for Its Unique Local Structure. Journal of the American Chemical Society (2023)
Tomoyuki Yamasaki, Soshi Iimura, Junghwan Kim, Hideo Hosono
Extremely Shallow Valence Band in Lanthanum Trihydride. Journal of the American Chemical Society 145 (1) (2022)
Kihyung Sim, Takuya Nakao, Masato Sasase, Soshi Iimura, Junghwan Kim, Hideo Hosono
18-Crown-6 Additive to Enhance Performance and Durability in Solution-Processed Halide Perovskite Electronics. Small (Weinheim an der Bergstrasse, Germany) 18 (31) (2022)
Tomoyuki Yamasaki, Ryosei Takaoka, Soshi Iimura, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono
Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction. ACS applied materials & interfaces 14 (17) (2022)
Tomoyuki Yamasaki, Soshi Iimura, Junghwan Kim, Hideo Hosono
Extremely Shallow Valence Band in Lanthanum Trihydride. Journal of the American Chemical Society (2022)
Masatake Tsuji, Soshi Iimura, Junghwan Kim, Hideo Hosono
Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications. ACS applied materials & interfaces (2022)
Junghwan Kim, Yu-Shien Shiah, Kihyung Sim, Soshi Iimura, Katsumi Abe, Masatake Tsuji, Masato Sasase, Hideo Hosono
High-Performance P-Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D-3D Core-Shell Structure. Advanced science (Weinheim, Baden-Wurttemberg, Germany) 9 (5) (2021)
Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong
High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film. ACS applied materials & interfaces 13 (24) (2021)
Hye-Mi Kim, Su-Hwan Choi, Hyun Jun Jeong, Jung-Hoon Lee, Junghwan Kim, Jin-Seong Park
Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization. ACS applied materials & interfaces 13 (26) (2021)
Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Grigori V Vazhenin, Junghwan Kim, Hideo Hosono
Origin of Metallic Nature of Na3N. Journal of the American Chemical Society 143 (1) (2020)
Jiangwei Li, Takeshi Inoshita, Tianping Ying, Atsushi Ooishi, Junghwan Kim, Hideo Hosono
A Highly Efficient and Stable Blue-Emitting Cs5 Cu3 Cl6 I2 with a 1D Chain Structure. Advanced materials (Deerfield Beach, Fla.) 32 (37) (2020)
Taehwan Jun, Kihyung Sim, Soshi Iimura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono
Lead-Free Highly Efficient Blue-Emitting Cs3 Cu2 I5 with 0D Electronic Structure. Advanced materials (Deerfield Beach, Fla.) 30 (43) (2018)
Taehwan Jun, Junghwan Kim, Masato Sasase, Hideo Hosono
Material Design of p-Type Transparent Amorphous Semiconductor, Cu-Sn-I. Advanced materials (Deerfield Beach, Fla.) 30 (12) (2018)
Hideo Hosono, Junghwan Kim, Yoshitake Toda, Toshio Kamiya, Satoru Watanabe
Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs. Proceedings of the National Academy of Sciences of the United States of America 114 (2) (2016)

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Publication Activity (10 Years)

Top Topics

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Junghwan Kim