High green index electromagnetic interference shields with semiconducting Bi 2 S 3 fillers in a PEDOT:PSS matrix.

Conventional metallic electromagnetic interference (EMI) shields, as well as the emerging 2D material-based shields, meet the shielding effectiveness (SE) needs of most applications. However, their shielding performance is dominated by the reflection of incoming radiation due to their high electrical conductivity, which leads to secondary pollution. This problem is getting exacerbated with the proliferation of electronics and communication networks in modern society. Thus, EMI shields that function dominantly by the absorption of incoming radiation are highly desirable. Such shields would be characterized by a green index, which is the ratio of absorbance over reflectance, close to or greater than one. For nonmagnetic materials, the best way to reduce the undesirable large impedance mismatch is to reduce the effective permittivity of the shield material. Here, we present a new EMI shield with a semiconductor Bi 2 S 3 filler in a conducting PEDOT:PSS polymer matrix, instead of the conventional conductive fillers, to reduce the effective permittivity and demonstrate that even a light loading of only 10% Bi 2 S 3 provides high SE of over 40 dB with a green index value of 0.75. Increasing the filler content to 15 wt% increases the green index close to unity while dropping the SE to 30 dB. The shielding mechanism is explained through electromagnetic parameter measurements and supplemented by density functional theory calculations. This work lays the foundation for the advancement of lightweight and ultrathin green EMI shields with minimum secondary pollution.