With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe 2 exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T' and vice versa, owing to the extremely small energy barrier between these two phases. MoTe 2 thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe 2 hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe 2 , demonstrate the approaches to the construction of 2D MoTe 2 hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.